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Photoluminescence, Capacitance-Voltage, and Variable Field Hall Effect Measurements of Mg-Doped InN

Published online by Cambridge University Press:  01 February 2011

Craig Hartley Swartz ,
Steven M. Durbin ,
Roger J. Reeves ,
Katherine Prince ,
John V. Kennedy ,
Sandeep Chandril ,
Thomas H. Myers  and
Damian Carder
Craig Hartley Swartz
Affiliation:
craig.swartz@canterbury.ac.nz, University of Canterbury, Electrical and Computer Engineering, Private Bag 4800, Christchurch, 8140, New Zealand
Steven M. Durbin
Affiliation:
steven.durbin@canterbury.ac.nz, The MacDiarmid Institute for Advanced Materials and Nanotechnology, Christchurch, 8140, New Zealand
Roger J. Reeves
Affiliation:
Roger.Reeves@canterbury.ac.nz, The MacDiarmid Institute for Advanced Materials and Nanotechnology, Christchurch, 8140, New Zealand
Katherine Prince
Affiliation:
katherine.prince@ansto.gov.au, Australian Nuclear Science and Technology Organization, Lucas Heights, N/A, Australia
John V. Kennedy
Affiliation:
J.Kennedy@GNS.org, GNS Science, Lower Hutt, 5040, New Zealand
Sandeep Chandril
Affiliation:
schandril@wvu.edu, West Virginia University, Physics, Morgantown, WV, 26506, United States
Thomas H. Myers
Affiliation:
thomas.myers@mail.wvu.edu, West Virginia University, Physics, Morgantown, WV, 26506, United States
Damian Carder
Affiliation:
damian.carder@canterbury.ac.nz, The MacDiarmid Institute for Advanced Materials and Nanotechnology, Christchurch, 8140, New Zealand
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Abstract

Variable magnetic field Hall effect, photoluminescence (PL) and capacitance-voltage (CV) analysis have been used to study InN layers grown by plasma assisted molecular beam epitaxy. All three techniques reveal evidence of a buried p-type layer beneath a surface electron accumulation layer in heavily Mg-doped samples. The use of lattice-matched Yttria-stablized Zirconia substrates also provides evidence of a p-type layer.

Keywords

molecular beam epitaxy (MBE)III-VHall effect

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 955: Symposium I – Advances in III-V Nitride Semiconductor Materials and Devices , 2006 , 0955-I08-06
Copyright
Copyright © Materials Research Society 2007

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References

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