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Photoluminescence In Strain Compensated Siisigec Multiple Quantum Wells

Published online by Cambridge University Press:  10 February 2011

R. Hartmann ,
U. Gennser ,
D. Grützmacher ,
H. Sigg ,
E. Müller  and
K. Ensslin
R. Hartmann
Affiliation:
Paul Scherrer Institut, CH-5232 Villigen-PSI, Switzerland
U. Gennser
Affiliation:
Paul Scherrer Institut, CH-5232 Villigen-PSI, Switzerland
D. Grützmacher
Affiliation:
Paul Scherrer Institut, CH-5232 Villigen-PSI, Switzerland
H. Sigg
Affiliation:
Paul Scherrer Institut, CH-5232 Villigen-PSI, Switzerland
E. Müller
Affiliation:
Paul Scherrer Institut, CH-5232 Villigen-PSI, Switzerland
K. Ensslin
Affiliation:
Paul Scherrer Institut, CH-5232 Villigen-PSI, Switzerland Eidgenössische Technische Hochschule, CH-8093 Zürich, Switzerland
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Abstract

The effect of strain compensation on the band gap and band alignment of Si/SiGeC MQWs is studied by photoluminescence (PL) spectroscopy. Evidence for type-I band alignment of strain reduced SiGeC MQWs is found. Values for the conduction and valence band offsets are given. A band gap reduction for exactly strain compensated SiGeC compared to compressive SiGeC is observed. This behavior is interpreted in terms of strain induced splitting and confinement shifts of the quantum well states. A good agreement between the model and the PL data is obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 533: Symposium FF – Epitaxy & Applications of Si-Based Heterostructures , 1998 , 251
Copyright
Copyright © Materials Research Society 1998

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