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Photoluminescence Study of GaAs Diffused with Li

Published online by Cambridge University Press:  25 February 2011

H. P. Gislason ,
E. Ö. Sveinbjörnsson ,
B. Monemar  and
M. Linnarsson
H. P. Gislason
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland
E. Ö. Sveinbjörnsson
Affiliation:
Science Institute, University of Iceland, Dunhaga 3, IS-107 Reykjavik, Iceland
B. Monemar
Affiliation:
Linköping University, Department of Physics and Measurement Technology, S-58l 83 Linköping, Sweden
M. Linnarsson
Affiliation:
Linköping University, Department of Physics and Measurement Technology, S-58l 83 Linköping, Sweden
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Abstract

We present a detailed study of the photoluminescence (PL) properties of a wide range of GaAs material diffused with the group I element Li. The effects of the Li diffusion are investigated through its effects on existing photoluminescence bands in the as-grown material as well as the appearence of new such bands. Among new PL bands resulting from the Li doping of n-type and semi-insulating material the most pronounced ones are a strong deep band at 1.34 eV and shallower bands at 1.45 and 1.48 eV. The origin of these PL bands will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 163: Symposium G – Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures , 1989 , 127
Copyright
Copyright © Materials Research Society 1990

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