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Photon-Controlled Growth of Multilayered Structures

Published online by Cambridge University Press:  25 February 2011

Douglas H. Lowndes ,
D. B. Geohegan ,
D. Eres ,
D. N. Mashburn  and
S. J. Pennycook
Douglas H. Lowndes
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
D. B. Geohegan
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
D. Eres
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
D. N. Mashburn
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831-6056
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Abstract

Pulsed ArF excimer laser (193 nm) photolysis has been used to deposit entirely amorphous and mixed amorphous/polycrystalline superlattice structures containing Si, Ge and Si3N4. High resolution in situ optical reflectivity measurements were used to monitor and/or control deposition. Transmission electron microscope cross-section views demonstrate that amorphous superlattice structures having highly reproducible layer thicknesses (from about 50 to several hundred A), and sharp interlayer boundaries, can be deposited at low substrate temperatures under laser photolytic control.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 103 , 1987 , 23
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

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