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Photo-Oxidation of Silicon: Reaction Mechanisms and Film Structure

Published online by Cambridge University Press:  22 February 2011

Ian W. Boyd
Ian W. Boyd*
Affiliation:
Electronic & Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, UK.
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Abstract

The use of intense photon beams to initiate silicon oxidation is reviewed. In particular, recent experiments involving visible photons are discussed, which confirm a thermal domination and a clear photon enhancement. With equal powers of 488 and 514 nm radiation, the latter initiates faster reaction rates. Structural studies of the films are also reported using IR spectrometry, where we find broad similarities and intriguing differences the between laser and furnace grown films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 105: Symposium F – SiO2 and Its Interfaces , 1987 , 23
Copyright
Copyright © Materials Research Society 1988

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