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Photoreflectance Near-Field Scanning Optical Microscopy

Published online by Cambridge University Press:  10 February 2011

Charles Paulson ,
Brian Hawkins ,
Jingxi Sun ,
Arthur B. Ellis ,
Leon Mccaughan  and
T. F. Kuech
Charles Paulson
Affiliation:
Department of Chemistry, University of Wisconsin, Madison, WI, 53706
Brian Hawkins
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI, 53706
Jingxi Sun
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI, 53706
Arthur B. Ellis
Affiliation:
Department of Chemistry, University of Wisconsin, Madison, WI, 53706
Leon Mccaughan
Affiliation:
Department of Electrical and Computer Engineering, University of Wisconsin, Madison, WI, 53706
T. F. Kuech
Affiliation:
Department of Chemical Engineering, University of Wisconsin, Madison, WI, 53706
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Abstract

A novel Near-field Scanning Optical Microscopy (NSOM) technique is used to obtain simultaneous topology, photoluminescence and photoreflectance (PR) spectra. PR spectra from GaAs surfaces were obtained and the local electric fields were calculated. Sub-wavelength resolution is expected for this technique and achieved for PL and topology measurements. Photovoltages, resulting from the high intensity of light at the NSOM tip, can limit the spatial resolution of the electric field determination.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 588: Symposium P – Optical Microstructural Characterization of Semiconductors , 1999 , 13
Copyright
Copyright © Materials Research Society 2000

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