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Physicochemical and Microstructural Characterization of Rf Sputtering Magnetron Pb(ZrTi)O3 Thin Films

Published online by Cambridge University Press:  21 February 2011

F. Varniere ,
E. Caytan ,
B. Eakim ,
H. Achard  and
B. Agius
F. Varniere
Affiliation:
Institut Universitaire de Technologie, Université de Paris Sud (XI), Plateau du Moulon, BP127, 91403 ORSAY CEDEX, FRANCE
E. Caytan
Affiliation:
Institut Universitaire de Technologie, Université de Paris Sud (XI), Plateau du Moulon, BP127, 91403 ORSAY CEDEX, FRANCE
B. Eakim
Affiliation:
Institut Universitaire de Technologie, Université de Paris Sud (XI), Plateau du Moulon, BP127, 91403 ORSAY CEDEX, FRANCE
H. Achard
Affiliation:
LETI Département de Microélectronique 85 X, 38041 GRENOBLE CEDEX, France
B. Agius
Affiliation:
Institut Universitaire de Technologie, Université de Paris Sud (XI), Plateau du Moulon, BP127, 91403 ORSAY CEDEX, FRANCE
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Abstract

Lead zirconate titanate thin films were deposited on Pt/TiN/BPSG/Si structures by sputtering an oxide target of nominal composition (Pb(Zr0.55,Ti0.45)O3 or PZT) in argon plasma. The PZT films were deposited at different pressures and different substrate temperatures ranging from floating temperature to 400°; the thicknesses of the sputtered films were in the 15-720 nm range. The absolute and relative cation and oxygen compositions of the thin films were determined by a new method based on the simultaneous use of Rutherford Backscattering Spectroscopy (RBS) and Nuclear Reaction Analysis (NRA) induced by a deuteron beam. The total deposition rate and atomic ones are observed as a function of the substrate temperature and pressure. Therefore the dependence of fil composition on pressure and substrate temperature is discussed.

Post-deposition annealing studies and ferroelectric properties are presented. The values of the remanent polarization, Pr, were in the range 5-7 µC/cm2, the coercitive field, Ec, between 15 and 25 kV/cm and the dielectric constant, µr, evaluated from capacitance measurements around 1200, depending on the process parameters.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 310: Symposium N – Ferroelectric Thin Films III , 1993 , 23
Copyright
Copyright © Materials Research Society 1993

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