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Planar Non-Volatile Memory based on Metal Nanoparticles

Published online by Cambridge University Press:  26 July 2011

A. Kiazadeh ,
H. L. Gomes ,
A. R. Da Costa ,
P. Rocha ,
Q. Chen ,
J. A. Moreira ,
D. M. De Leeuw  and
S. C. J. Meskers
A. Kiazadeh
Affiliation:
Center of Electronics Optoelectronics and Telecommunications (CEOT) Universidade do Algarve, Campus de Gambelas, 8000-139 Faro, Portugal,
H. L. Gomes
Affiliation:
Center of Electronics Optoelectronics and Telecommunications (CEOT) Universidade do Algarve, Campus de Gambelas, 8000-139 Faro, Portugal,
A. R. Da Costa
Affiliation:
Centro de Investigação em Química do Algarve Universidade do Algarve, Campus de Gambelas, 8000-139 Faro, Portugal,
P. Rocha
Affiliation:
Centro de Investigação em Química do Algarve Universidade do Algarve, Campus de Gambelas, 8000-139 Faro, Portugal,
Q. Chen
Affiliation:
Centro de Investigação em Química do Algarve Universidade do Algarve, Campus de Gambelas, 8000-139 Faro, Portugal,
J. A. Moreira
Affiliation:
Centro de Investigação em Química do Algarve Universidade do Algarve, Campus de Gambelas, 8000-139 Faro, Portugal,
D. M. De Leeuw
Affiliation:
Philips Research Laboratories, High Tech Campus 4 WAG 11, 5656 AE Eindhoven, The Netherlands
S. C. J. Meskers
Affiliation:
Molecular Materials and Nanosystems, Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands
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Abstract

Resistive switching properties of silver nanoparticles hosted in an insulating polymer matrix (poly(N-vinyl-2-pyrrolidone) are reported. Planar devices structures using interdigitated gold electrodes were fabricated. These devices have on/off resistance ratio as high as 103 , retention times reaching to months and good endurance cycles. Temperature-dependent measurements show that the charge transport is weakly thermal activated (73 meV) for both states suggesting that nanoparticles will not aggregate into a metallic filament.

Keywords

electrical propertiesnanostructureAg

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References

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