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Plasma Induced Changes to TCO/a-Si:H Interfaces

Published online by Cambridge University Press:  10 February 2011

J. Wallinga ,
D. Knoesen ,
E. A. G. Hamers ,
W. G. J. H. M. Van Sark ,
W. F. Van Der Weg  and
R. E. I. Schropp
J. Wallinga
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
D. Knoesen
Affiliation:
Department of Physics, University of the Western Cape, Private Bag X17, SA-Beliville 7535, South Africa.
E. A. G. Hamers
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
W. G. J. H. M. Van Sark
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
W. F. Van Der Weg
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
R. E. I. Schropp
Affiliation:
Debye Institute, Department of Atomic and Interface Physics, Universiteit Utrecht, P.O. Box 80.000, NL-3508 TA Utrecht, the Netherlands
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Abstract

The effect of ion bombardment on the plasma enhanced chemical vapor deposition of a-Si:H and on TCO/a-Si:H interface reactions has been studied. An external DC-bias voltage is applied to the deposition plasma in order to change the ion flux and ion energy. The deposition rate increases with the applied bias-voltage i.e. with the plasma potential. Hydrogenated amorphous silicon is grown on natively rough transparent conductive oxide. With cross-sectional transmission electron microscopy lower density regions can be observed in the a-Si:H in all sharp valleys of the TCO. The appearance of the lower density regions changes under influence of the ion bombardment. The observed changes are in agreement with the changes observed when no ion bombardment is present at all, like in a hot wire chemical vapor deposition process. The increased ion bombardment did not give rise to observable chemical reactions at the TCO/a-Si:H interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 420: Symposium A – Amorphous Silicon Technology-1996 , 1996 , 57
Copyright
Copyright © Materials Research Society 1996

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References

1. Sakai, H., Yoshida, T., Hama, T., and Ichikaswa, Y., Jpn. J. Appl. Phys. 29, 630 (1990).Google Scholar
2. Knoesen, D., Schropp, R. E. I., and van der Weg, W. F., in Amorphous Silicon Technology, edited by Hack, M., Schiff, E. A., Madan, A., Powell, M., and Matsuda, A. (Materials Research Society, Pittsburg, Pa., U.S.A., 1995), Vol.377, p. 597.Google Scholar
3. Major, S., Kumar, S., Bhatnagar, M., and Chopra, K., Appl. Phys. Lett. 49, 394 (1986).Google Scholar
4. Demichelis, F. et al., in Amorphous Silicon Technology, edited by Thompson, M. J., Hamakawa, Y., LeComber, P. G., Madan, A., and Schiff, E. (Materials Research Society, Pittsburg, Pa., U.S.A., 1992), Vol.258, p. 905.Google Scholar
5. E. A. G. Hamers. Sark, W. G. J. H. M. van, Bezemer, J., Goedheer, W. J., and Weg, W. F. van der (submitted to J. Vac. Sci. Technol. A).Google Scholar
6. Hamers, E. A. G., Sark, W. G. J. H.M van, Bezemer, J., Weg, W. F.van der, and Goedheer, W. J. (these proceedings).Google Scholar
7. Nijs, J. M. M. and Aarts, R. G. K. M., Surf. Int. Anal. 17, 628 (1991).Google Scholar
8. Papadopulos, P., Scholz, A., Bauer, S., Schrhder, B., and Oechsner, H., J. Non-Cryst. Solids 164–166, 87 (1993).Google Scholar
9. Tsai, C. C., Knights, J. C., , C. G., and Wacker, B., J. Appl. Phys. 59, 2998 (1986).Google Scholar