Hostname: page-component-8448b6f56d-wq2xx Total loading time: 0 Render date: 2024-04-18T10:34:09.396Z Has data issue: false hasContentIssue false

PMN-PT thin films: Electromechanical behaviour, polarisability and microstructure

Published online by Cambridge University Press:  11 February 2011

N. J. Donnelly
Affiliation:
Condensed Matter Physics and Materials Science, Queens University, Belfast BT7 1NN, N. Ireland.
G. Catalan
Affiliation:
Condensed Matter Physics and Materials Science, Queens University, Belfast BT7 1NN, N. Ireland.
C. Morros
Affiliation:
Condensed Matter Physics and Materials Science, Queens University, Belfast BT7 1NN, N. Ireland.
R. M. Bowman
Affiliation:
Condensed Matter Physics and Materials Science, Queens University, Belfast BT7 1NN, N. Ireland.
J. M. Gregg
Affiliation:
Condensed Matter Physics and Materials Science, Queens University, Belfast BT7 1NN, N. Ireland.
Zian Kighelman
Affiliation:
Ceramics Laboratory, Materials Department, Swiss Federal Institute of Technology – EPFL, CH-1015 Lausanne, Switzeland
Dragan Damjanovic
Affiliation:
Ceramics Laboratory, Materials Department, Swiss Federal Institute of Technology – EPFL, CH-1015 Lausanne, Switzeland
Nava Setter
Affiliation:
Ceramics Laboratory, Materials Department, Swiss Federal Institute of Technology – EPFL, CH-1015 Lausanne, Switzeland
Get access

Abstract

Thin film capacitor structures of Pb(Mg1/3Nb2/3)O3 (PMN) - PbTiO3 (PT) were fabricated using pulsed laser deposition (PLD) on MgO{100} substrates using (La1/2,Sr1/2)CoO3 (LSCO) as a lower electrode. Crystallographic and dielectric characterisation confirmed perovskite relaxor-like behaviour. Measurements of the electrostrictive coefficients by in-situ X-ray diffraction, piezo-response atomic force microscopy and three point bending experiments showed both Q11 and Q13 to be comparable to accepted values for single crystals. However, for a given field, the electric field-induced strain in the thin films was much less than that of single crystal. This was clearly intimately linked to poor thin film polarisability. Previous work had shown sol-gel PMN-PT films to have significantly greater permittivities than PLD films, and a TEM investigation was undertaken to see if functional differences could be related to differences in microstructure, and hence if the functional and electromechanical properties of PLD films could be improved by attempting to replicate sol-gel microstructures.

Type
Research Article
Copyright
Copyright © Materials Research Society 2003

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Park, S.E., Shrout, T.R., J. Appl. Phys., 82, 1804, (1997)Google Scholar
2. Durbin, M.K., Jacobs, E.W., Hicks, J.C., and Park, S.-E., Appl. Phys. Letts., 74, 2848, (1999)Google Scholar
3. Kighelman, Z., Damjanovic, D., Seifert, A., Sagalowicz, L., and Setter, N., Appl. Phys. Letts., 73, 2281, (1998)Google Scholar
4. Catalan, G., Corbett, M.H., Bowman, R.M., and Gregg, J.M., Appl. Phys. Letts., 74, 3035, (1999)Google Scholar
5. Kighelman, Z., Damjanovic, D., and Setter, N., J. Appl. Phys., 90, 4682, (2001)Google Scholar
6. Kholkin, A.L., Akdogan, E.K., Safari, A., Chauvy, P.-F. and Setter, N., J. Appl. Phys., 89, 8066, (2001)Google Scholar
7. Nagarajan, V., Alpay, S.P., Ganpule, C.S., Nagaraj, B.K., Aggarwal, S., Williams, E.D., Roytburd, A.L. and Ramesh, R., Appl. Phys. Letts., 77, 438, (2000)Google Scholar
8. Shrout, T. R. and Fielding, J. Jr, Proc. of the IEEE 1990 Ultrasonic Symp., Vol. 2, 711 (1990)Google Scholar
9. Zhao, J., Zhang, Q.M., Kim, N. and Shrout, T., Jpn. J. Appl. Phys., 34, 5658, (1995)Google Scholar
10. Uchino, K., Nomura, S., Cross, L.E., Jang, S.J., & Newnham, R.E., J. Appl. Phys., 51, 1142, (1980)Google Scholar
11. Donnelly, N.J., Catalan, G., Morros, C., Bowman, R.M. and Gregg, J.M., J. Appl. Phys., 91, 6200, (2002)Google Scholar
12. Kighelman, Z., Damjanovic, D., and Setter, N., J. Appl. Phys., 89, 1393, (2001)Google Scholar