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Polytype Stability and Defect Reduction in 4H-SiC Crystals Grown via Sublimation Technique

Published online by Cambridge University Press:  10 February 2011

R. Yakimova ,
T. Iakimov ,
M. Syvdijarvi ,
H. Jacobsson ,
P. Råback ,
A. Vehanen  and
E. Janzén
R. Yakimova
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden Okmetic AB, Box 255, 17824 Ekerö, Sweden
T. Iakimov
Affiliation:
Okmetic AB, Box 255, 17824 Ekerö, Sweden
M. Syvdijarvi
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
H. Jacobsson
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
P. Råback
Affiliation:
Center for Scientific Computing, P.O. Box 405, FIN-02101 Espoo, Finland
A. Vehanen
Affiliation:
Okmetic Ltd., PO Box 44, FIN-01301 Vantaa, Finland
E. Janzén
Affiliation:
Dept of Physics and Measurement Technology, Linköping University, S-581 83 Linköping, Sweden
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Abstract

Reproducible growth of 4H-SiC with good crystalline quality has been obtained in a temperature interval around 2350°C and on 4H-SiC C-face seeds. It has been observed that morphological instability may appear at the initial stage of growth, causing formation of defects. Experimental evidence has been found that supersaturation and surface kinetics are responsible for the polytype stability, while growth front and growth mode address defect reduction. An explanation of the findings has been suggested. It has been shown that starting the growth with a relatively low growth rate ( ≈ 100 μm/h ) can be beneficial for the crystal quality.

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References

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