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Power Limitation Due To Premature Breakdown In Algan/Gan Hfets

Published online by Cambridge University Press:  10 February 2011

G. Gradinaru ,
N. C. Kao ,
J. Yang ,
Q. Chen ,
M. A. Khan  and
T. S. Sudarshan
G. Gradinaru
Affiliation:
ECE Department, University of South Carolina, Columbia, SC 29208, gradinag@engr.sc.edu
N. C. Kao
Affiliation:
ECE Department, University of South Carolina, Columbia, SC 29208, gradinag@engr.sc.edu
J. Yang
Affiliation:
APA Optics, APA Inc., Blaine, MN 55449
Q. Chen
Affiliation:
APA Optics, APA Inc., Blaine, MN 55449
M. A. Khan
Affiliation:
ECE Department, University of South Carolina, Columbia, SC 29208, gradinag@engr.sc.edu
T. S. Sudarshan
Affiliation:
ECE Department, University of South Carolina, Columbia, SC 29208, gradinag@engr.sc.edu
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Abstract

A systematic investigation of high field prebreakdown and breakdown phenomena of AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) is presented. The breakdown process was studied as a function of various parameters such as applied electric field, material layer structure, semiconductor surface conditions, ambient dielectric, and test conditions. Experimental evidence of a breakdown mechanism, distinct from the bulk/subsurface breakdown, namely on-surface breakdown or surface flashover is presented. A practical, unambiguous way of identifying device failure by surface flashover is proposed. Surface flashover between gate and drain contact edges is proposed as the main mechanism initiating premature breakdown in these devices leading to a significant reduction of their power capability.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 483: Symposium E – Power Semiconductor Materials & Devices , 1997 , 77
Copyright
Copyright © Materials Research Society 1998

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