Hostname: page-component-76fb5796d-zzh7m Total loading time: 0 Render date: 2024-04-26T03:10:38.430Z Has data issue: false hasContentIssue false
  • English
  • Français

Predictive Surface Kinetic Analysis: The Case of TiSi2 CVD

Published online by Cambridge University Press:  22 February 2011

M. A. Mendicino ,
R. P. Southwell  and
E. G. Seebauer
M. A. Mendicino
Affiliation:
Department of Chemical Engineering, University of Illinois, Urbana, IL 61801
R. P. Southwell
Affiliation:
Department of Chemical Engineering, University of Illinois, Urbana, IL 61801
E. G. Seebauer
Affiliation:
Department of Chemical Engineering, University of Illinois, Urbana, IL 61801
Get access

Abstract

Recently, TiSi2 has been the object of considerable study because of its low resistivity among the transition metal silicides and its compatibility with existing ULSI technology [1,2]. Film growth by CVD offers the potential for selective area deposition and high production throughput. However, selective CVD of TiSi2 from gas phase SiH4 and TiCl4 is usually accompanied by a competing reaction which consumes intolerable amounts of the Si substrate [3,4]. Controlling this consumption is crucial in TiSi2 growth; however, no quantitative correlation exists between silicon consumption and growth conditions or film thickness. Additionally, the reaction mechanism for TiSi2 growth is poorly understood, and some disagreement even exists about the reaction stoichiometry [5,6]. The combined CVD/UHV approach we have developed fills many gaps in the current understanding of TiSi2 CVD.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 63
Copyright
Copyright © Materials Research Society 1994

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

[1] Murarka, S.P., Silicides for VLSI Applications, (New York, Academic), 1983.Google Scholar
[2] Murarka, S.P., J. Vac. Sci. Technol., vol. B4, p. 1325, 1986.Google Scholar
[3] Bouteville, A., Remy, J.C. and Attuyt, C., J. Electrochem. Soc., vol. 139, p. 2260, 1992 Google Scholar
[4] Lee, J. and Reif, R., J. Electron. Mater., vol 20, p. 331, 1991 Google Scholar
[5] Reynolds, G.J., Cooper, C.B. III and Gaczi, P.J., J. Appl. Phys., vol 65, p. 3212, 1989 Google Scholar
[6] Ilderem, V., Reif, R., J. Electrochem. Soc., vol 135, p. 2590, 1988 CrossRefGoogle Scholar
[7] Müiller-Markgraf, W. and Rossi, M.J., Rev. Sci. Instrum., vol. 61, p. 1217, 1990.Google Scholar
[8] Corcoran, Y.L, King, A.H., deLanerolle, N., and Kim, B., J. Electron Mater., vol. 19, p. 1177, 1990.Google Scholar