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Preferential Sputtering Effects in Elemental Depth Profiling of Tellurium-Based Alloy Thin Films

Published online by Cambridge University Press:  25 February 2011

R. C. Ross ,
G. L. Jones ,
S. S. Chao ,
J. P. deNeufville ,
E. J. Bjornard  and
J. E. Tyler
R. C. Ross
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
G. L. Jones
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
S. S. Chao
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
J. P. deNeufville
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
E. J. Bjornard
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
J. E. Tyler
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

The compositions of sputtered amorphous thin films of Se50Te50, Ge50Te50, and (Te90Ge5 In5)100-x 0 x=0-25 have been measured by electron microprobe x-ray analyzer (EMP) and Auger electron spectroscopy (AES) with sputter depth profiling. Preferential removal of certain elements from the surface region during sputtering is shown to significantly alter the AES-determined surface composition. The effects of sputtering ion mass (He1, Ar1, Xe1), Ar+ energy (1.5 and 4.0 keV), and target temperature (-100 and 25°C) were investigated. The degree of preferential sputtering is found to be controlled predominantly by differences in surface binding energy of the elements with secondary contributions in the case of 0 due to bombarding atom to target atom collisional energy transfer processes.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 69: Symposium D – Materials Characterization , 1986 , 141
Copyright
Copyright © Materials Research Society 1986

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