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The Preparation and Characterization of Lithium Cobalt Oxide thin Films by LPCVD

Published online by Cambridge University Press:  10 February 2011

L.T. Kenny ,
R.C. Breitkopf ,
T.E. Haas  and
R.B. Goldner
L.T. Kenny
Affiliation:
Department of Chemistry, Tufts University, Medford, MA 02155rbreitko@emerald.tufts.edu
R.C. Breitkopf
Affiliation:
Department of Chemistry, Tufts University, Medford, MA 02155rbreitko@emerald.tufts.edu
T.E. Haas
Affiliation:
Department of Chemistry, Tufts University, Medford, MA 02155rbreitko@emerald.tufts.edu
R.B. Goldner
Affiliation:
Department of Chemistry, Tufts University, Medford, MA 02155rbreitko@emerald.tufts.edu
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Abstract

LPCVD thin films of lithium cobalt oxide (LiCoO2) were grown using tertbutyllithium (t-BuLi) and cyclopentadienyl cobalt dicarbonyl (CoCp(CO)2) as precursors in a cold-walled vertical reactor. Deposition rates were found to be as high as 25 A/s. Lithium to cobalt ratios (Li/Co) in the films were found to increase with increasing Ar carrier gas flow rates in the t-BuLi line while they were found to decrease with increasing system pressure. Electrochemical measurements show typical film open circuit voltages (OCV) for as-prepared films to be between 3.30 and 3.60 V vs. Li. Atomic Force Microscopy shows a striated, crystalline film formed at substrate temperatures (Ts) as low as 400 C with grain sizes as large as 200 nm in length.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 415: Symposium BB – Metal-Organic Chemical Vapor Deposition of Electronic Ceramics II , 1995 , 213
Copyright
Copyright © Materials Research Society 1996

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References

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