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Preparation and Characterization of the Active Layer for an Led Based on Oxidized Porous Silicon

Published online by Cambridge University Press:  15 February 2011

L. Tsybeskov ,
K. D. Hiirschman ,
L. F. Moore ,
P. M. Fauchet  and
P. D. J. Calcott
L. Tsybeskov
Affiliation:
Department of Electrical Engineering, University of Rochester, Rochester, NY 14627
K. D. Hiirschman
Affiliation:
Also Department of Microelectronic Engineering, Rochester Institute of Technology, Rochester NY 14623
L. F. Moore
Affiliation:
Department of Physics & Astronomy, University of Rochester, Rochester NY 14627
P. M. Fauchet
Affiliation:
Also Laboratory for Laser Energetics, Department of Physics & Astronomy and The Institute of Optics, University of Rochester, Rochester NY 14627
P. D. J. Calcott
Affiliation:
DRA Malvern, St Andrews Rd, Malvern, Worcs WR14 3PS, UK
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Abstract

We have studied the photoluminescence (PL) in oxidized porous silicon (PSi), prepared from anodized crystalline Si followed by annealing at temperatures ranging from 700 to 1000°C. It has been found that two PL bands with spectral peaks at 1.6 e V (near-IR band) and near 2 eV (red band) exist with a strong dependence on preparation (annealing) conditions. Recent experimental results show a correlation between the intensity of the near-IR band and the level of leakage current in the diode-like structure. The suppression of the near-IR emission results in improved carrier transport, and the enhancement of the red band emission maximizes the electroluminescence (EL) efficiency. The PL study of thermally oxidized PSi indicates different recombination mechanisms. The red PL band is associated with a mechanism similar to band-tail-recombination within the quasi-bandgap of Si nanograins, whereas the near infra-red PL is associated with recombination via defect centers. These mechanisms will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 452 , 1996 , 687
Copyright
Copyright © Materials Research Society 1997

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