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Preparation And Photovoltaic Properties Of Tin Sulfide And Tin Oxysulfide Thin Films By Spray Pyrolysis Technique

Published online by Cambridge University Press:  10 February 2011

Tsuyoshi Kosugi ,
Kenji Murakami  and
Shoji Kaneko
Tsuyoshi Kosugi
Affiliation:
Grad School of Elect. Sci. & Technol. Shizuoka University, Johoku, Hamamatsu 432–8561, Japan
Kenji Murakami
Affiliation:
Res. Inst. Electron. Shizuoka University, Johoku, Hamamatsu 432–8561, Japan
Shoji Kaneko
Affiliation:
Dept. of Mater. Sci. & Technol., Shizuoka University, Johoku, Hamamatsu 432–8561, Japan
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Abstract

Tin sulfide and a related novel compound, tin oxysulfide, thin films were deposited from the aqueous solution containing tin (11) chloride and thiourea by a spray pyrolysis technique. The constituent atoms of the thin films have merits of nontoxicity and availability. Physical and photovoltaic properties of both films were also investigated. It has, therefore, been considered that these two compounds become a promising absorbing layer for solar cell on account photovoltaic ability with high absorption coefficient and appropriate bandgap energy.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 273
Copyright
Copyright © Materials Research Society 1998

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References

1. Parenteau, M. and Carlone, C., Phys. Rev. B, 41, 5227 (1990).Google Scholar
2. Adachi, A., Kudo, A. and Sakata, T., Bull. Chem. Soc. Jpn., 68, 3283 (1995).Google Scholar
3. Noguchi, H., Setiyadi, A., Tanamura, H., Nagamoto, T. and Omoto, O., Solar Energy Mater. & Solar Cells, 35, 325 (1994).Google Scholar
4. Murakami, K., Yagi, I. and Kaneko, S., J. Am. Ceram. Soc., 79, 2557 (1996).Google Scholar
5. Lopez, S. and Ortiz, A., Semicond. Sci. Technol., 9, 2130 (1994).Google Scholar
6. Klug, H. P. and Alexander, L., X-ray Diffraction Procedure for Polycrystalline and Amorphous Materials, Jhon Wiley & Sons, New York, 1974, pp. 445.Google Scholar
7. Wells, A. F., Structural Inorganic Chemistry, Clarendon Press, Oxford, 1970, pp. 1282.Google Scholar
8. ibid., pp. 537.Google Scholar
9. Engelken, R. D., McCloud, H. E., Lee, C., Slayton, M. and Ghoreishi, H., J. Electrochem. Soc., 134, 2696 (1987).Google Scholar
10. Nair, M. T. S. and Nair, P. K., Semicond. Sci. Technol., 6, 132 (1991).Google Scholar
11. Ortiz, A., Alonso, J. C., Gracia, M. and Toriz, J., Semicond. Sci. Technol., 11, 243 (1996).Google Scholar
12. Fouado, S. S., Moursy, A. Y., EI-Fallal, I. and Harith, M. A., Czech. J. Phys., 42, 235 (1992).Google Scholar