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Preparation of GaAs Soi and its Laser Recrystallization

Published online by Cambridge University Press:  22 February 2011

LI Xiqiang ,
Chen Zhihao ,
Lin Chenglu  and
Wang Weiyuan
LI Xiqiang
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Chen Zhihao
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Lin Chenglu
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
Wang Weiyuan
Affiliation:
Shanghai Institute of Metallurgy, Academia Sinica, Shanghai, China
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Abstract

GaAs SOI consisting of a sputtered GaAs film on a SiO2 −Si or sapphire substrate is irradiated by CW Ar+ laser beam with a view to investigating its recrystallization. Using AES, x-ray diffraction, TEM and ED, we have studied the compositions, crystal orientations and grain size of the laser-irradiated GaAs films. The possible application of GaAs SOI to devices is discussed on the basis of the experimental results.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 23 , 1983 , 621
Copyright
Copyright © Materials Research Society 1984

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References

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