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Preparation of Silicon Carbide Nano-Particles Using a Pulsed Laser Deposition Method

Published online by Cambridge University Press:  21 March 2011

H. Kawasaki ,
Y. Suda ,
T. Ohshima ,
T. Ueda  and
S. Nakashima
H. Kawasaki
Affiliation:
Sasebo National College of Technology 1-1 Okishin, Sasebo, Nagasaki 857-1193, Japan
Y. Suda
Affiliation:
Sasebo National College of Technology 1-1 Okishin, Sasebo, Nagasaki 857-1193, Japan
T. Ohshima
Affiliation:
Sasebo National College of Technology 1-1 Okishin, Sasebo, Nagasaki 857-1193, Japan
T. Ueda
Affiliation:
Sasebo National College of Technology 1-1 Okishin, Sasebo, Nagasaki 857-1193, Japan
S. Nakashima
Affiliation:
Sasebo National College of Technology 1-1 Okishin, Sasebo, Nagasaki 857-1193, Japan
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Abstract

We have developed a new pulsed laser deposition technique using two Nd:YAG laser beams for the nucleation of silicon carbide (SiC) crystalline nano-particles and single crystalline SiC thin films. Transmission electron microscopy and atomic force microscopy observation suggest that several nanometer size SiC particles can be prepared by the new pulsed laser deposition (PLD) method using two Nd:YAG laser beams (1064nm and 532nm). X ray photoelectron spectroscopy measurements suggest that the silicon/carbon composition ratio of the prepared SiC thin films can be controlled by laser fluence and wavelength.

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References

[1] Chrisey, D. B. and Hubler, G. K.: Pulsed Lased Deposition of Thin Films, John Wiley & Son (1994).Google Scholar
[2] Suda, Y., Kawasaki, H., Iwatsuji, K. and Ohshima, T., Transactions of the Institute of Electrical Engineers of Japan, 123 (2003) 222.Google Scholar
[3] Kawasaki, H., Namba, J., Iwatsuji, K., Suda, Y., Wada, K., Ebihara, K. and Ohshima, T., Appl. Surf. Sci. 197 (2002) 547–551.Google Scholar