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Preparations and Evaluations of Magnetoelectric Thin Films for Josephson Field Effect Transistor

Published online by Cambridge University Press:  17 March 2011

Nobuyuki Iwata ,
Koji Matsuo ,
Noriaki Ootsuka  and
Hiroshi Yamamoto
Nobuyuki Iwata
Affiliation:
College of Science and Technology, Nihon University, Japan
Koji Matsuo
Affiliation:
College of Science and Technology, Nihon University, Japan
Noriaki Ootsuka
Affiliation:
College of Science and Technology, Nihon University, Japan
Hiroshi Yamamoto
Affiliation:
College of Science and Technology, Nihon University, Japan
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Abstract

We proposed the magnetoelectric (ME) effect as a new function of oxides electronic devices. The ME effect is characterized by the appearance of an induced magnetization with electric field applied and also is true in the opposite way. As one of the oxides devices we proposed a new type of Josephson field effect transistor (JFET) as adopting the ME materials to a gate insulator. In such the device, considering the Fraunhofer pattern, large IC modulation was expected by the induced magnetic field. Representative ME material, Cr2O3 films were deposited on Josephson junctions which were formed bygrain boundaries in YBa2Cu3OX (YBCO) films grown on MgO substrates. The multilayered films, Cr2O3 /YBCO and Cr2O3 / Y2O3 / YBCO were studied as the model of JFET.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 811: Symposia D/E – Integration of Advanced Micro-and Nanelectronic Devices-Critical Issues and Solutions , 2004 , E3.6
Copyright
Copyright © Materials Research Society 2004

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References

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