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Present Status of III-Nitride Based Photodetectors

Published online by Cambridge University Press:  15 March 2011

Eva Monroy ,
Fernando Calle ,
José Luis Pau ,
Elías Muñoz ,
Franck Omnès ,
Bernard Beaumont  and
Pierre Gibart
Eva Monroy
Affiliation:
Dpto. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040-Madrid, Spain
Fernando Calle
Affiliation:
Dpto. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040-Madrid, Spain
José Luis Pau
Affiliation:
Dpto. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040-Madrid, Spain
Elías Muñoz
Affiliation:
Dpto. Ingeniería Electrónica, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria, 28040-Madrid, Spain
Franck Omnès
Affiliation:
CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560-Valbonne, France
Bernard Beaumont
Affiliation:
CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560-Valbonne, France
Pierre Gibart
Affiliation:
CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560-Valbonne, France
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Abstract

This paper describes the characteristics of a variety of AlGaN-based photodetectors (photoconductors, metal-semiconductor-metal photodiodes, Schottky photodiodes and p-i-n photodiodes), grown on sapphire by metalorganic vapor phase epitaxy. The features that determine their performance are analyzed. Results using other substrates (epitaxial lateral overgrown GaN, Si) are also presented.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 622: Symposium T – Wide-Bandgap Electronic Devices , 2000 , T3.7.1
Copyright
Copyright © Materials Research Society 2000

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References

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