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Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms

Published online by Cambridge University Press:  26 February 2011

Guo-Quan Lu ,
Eric Nygren  and
Michael J. Aziz
Guo-Quan Lu
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
Eric Nygren
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, Columbus OH43210
Michael J. Aziz
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge MA 02138
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Abstract

We have measured the effects of hydrostatic pressure on the solid phase epitaxial growth (SPEG) rates of undoped Ge(100) and Si(100) into their respective self-implanted amorphous phases. We found that pressure enhances the growth process in both Si and Ge, with activation volumes equal to -3.3 ± 0.3 cm3/mole for Si and -6.3 ± 0.60 cm3/mole for Ge. The results of this and other experiments are inconsistent with all bulk point-defect mechanisms, but are consistent with all interface point-defect mechanisms, proposed to date for thermal SPEG. A kinetic analysis of the Spaepen-Turnbull dangling bond mechanism shows it to be a highly plausible model for the growth process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 205: Symposium F – Kinetics of Phase Transformations , 1990 , 33
Copyright
Copyright © Materials Research Society 1992

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