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Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

Published online by Cambridge University Press:  01 February 2011

Byoung-Gue Min ,
Jong-Min Lee ,
Seong-Il Kim ,
Chul-Won Ju  and
Kyung-Ho Lee
Byoung-Gue Min
Affiliation:
InP IC Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305–350, KOREA
Jong-Min Lee
Affiliation:
InP IC Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305–350, KOREA
Seong-Il Kim
Affiliation:
InP IC Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305–350, KOREA
Chul-Won Ju
Affiliation:
InP IC Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305–350, KOREA
Kyung-Ho Lee
Affiliation:
InP IC Team, Basic Research Laboratory, Electronics and Telecommunications Research Institute, Daejeon 305–350, KOREA
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Abstract

A significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 833: Symposium G – Materials, Integration, and Packaging Issues for High-Frequency Devices II , 2004 , G3.7
Copyright
Copyright © Materials Research Society 2005

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References

REFERENCES

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