Hostname: page-component-8448b6f56d-cfpbc Total loading time: 0 Render date: 2024-04-25T04:44:29.560Z Has data issue: false hasContentIssue false

Principles of Technology and Mechanical Properties of Structural Ceramics Based on the Ternary System SiC–B4C–CrB2

Published online by Cambridge University Press:  01 October 2015

Aleksei V. Chalgin
Affiliation:
Saint Petersburg State Institute of Technology (Technical University), Department of Chemical Technology of Refractory Nonmetal and Silicate Materials, Saint-Petersburg, Russia.
Sergei V. Vikhman
Affiliation:
Saint Petersburg State Institute of Technology (Technical University), Department of Chemical Technology of Refractory Nonmetal and Silicate Materials, Saint-Petersburg, Russia.
Sukyas S. Ordan’yan
Affiliation:
Saint Petersburg State Institute of Technology (Technical University), Department of Chemical Technology of Refractory Nonmetal and Silicate Materials, Saint-Petersburg, Russia.
Dmitry P. Danilovich
Affiliation:
Saint Petersburg State Institute of Technology (Technical University), Department of Chemical Technology of Refractory Nonmetal and Silicate Materials, Saint-Petersburg, Russia.
Maria V. Nechaeva
Affiliation:
Saint Petersburg State Institute of Technology (Technical University), Department of Chemical Technology of Refractory Nonmetal and Silicate Materials, Saint-Petersburg, Russia.
Get access

Abstract

The aim of this research was to work out the technology of ceramics for finding optimal sintering temperatures and to study their mechanical properties. Samples were prepared from powders with different volumetric ratio of the components. The powders underwent a prolonged co-milling in a vibratory mill, followed by uniaxial pressing, cold isostatic pressing (CIP) and pressureless sintering in a vacuum furnace under an argon atmosphere. Hot pressing (HP) was applied to some powder formulations. This study showed that it is advisable to carry out the first stage of the heat treatment up to 1550 ̊C under vacuum, with the aim of refining the grain surface from the oxygen-containing impurities due to their dissociation and evaporation. The studied area of formulations has a very narrow range of sintering (1940-1945 ̊C). It was established that the sinterability of the materials is affected by the amount of silicon carbide in the ternary system. Under pressureless sintering, the relative density of the material directly depended on the volume fraction of SiC. However, a change in the concentration of B4C had no appreciable effect on the sinterability of the materials. The application of HP helped us to reduce the negative impact of large amounts of SiC. Under HP at temperatures close to Teut, a certain decompaction of materials was observed with a significant amount of B4C (3-5% loss in density).

Type
Articles
Copyright
Copyright © Materials Research Society 2015 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Kisliy, P.S., Kuzenkova, M.A., Bondaruk, N.I. and Grabchuk, B.L., Boron carbide, (Naukova Dumka, Kiev, 1988) (in Russian) p. 216 Google Scholar
Ordan’yan, S.S., Danilovich, D.P., Nesmelov, D.D. and Rumyantsev, V.I., Ogneupory Tekhn. Keram. No. 7/8, 21-25 (2010).Google Scholar