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Probing Selective Deposition of Aluminum Using in Situ Infrared Spectroscopy

Published online by Cambridge University Press:  22 February 2011

Wayne L. Gladfelter ,
Michael G. Simmonds ,
Larry A. Zazzera  and
John F. Evans
Wayne L. Gladfelter
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
Michael G. Simmonds
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
Larry A. Zazzera
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
John F. Evans
Affiliation:
Department of Chemistry, University of Minnesota, Minneapolis, Minnesota 55455
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Abstract

Dimethylethylamine alane (DMEAA) has been used to deposit thin films of aluminum selectively on gold in the presence of silicon oxide. This paper presents studies of the effect of temperature, pressure, and substrate pattern on the selectivity. A specially designed reactor allowed us to probe the structure of the species on the silica surface using infraed spectroscopy. At room temperature two absorptions in the Al-H stretching region were assigned to two species; weakly bound molecules of the intact precursor and a strongly bound dihydride formed from the reaction of DMEAA with surface bound (and H-bonded) hydroxyls (from H2O or silanol groups). At higher temperatures the CH vibrations of the amine disappeared, and the Al-H stretch shifted to higher energy. A weak absorption at 2250 cm−1 attributable to a Si-H also appeared. The impact of these observations on the loss of selectivity is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 334: Symposium W – Gas-Phase and Surface Chemistry in Electronic Materials Processing , 1993 , 273
Copyright
Copyright © Materials Research Society 1994

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References

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