Hostname: page-component-cb9f654ff-hn9fh Total loading time: 0 Render date: 2025-08-30T12:42:30.082Z Has data issue: false hasContentIssue false

Probing the Orbital Levels of Engineered Fullerenic Moleculesfrom a Nonvolatile Memory Cell

Published online by Cambridge University Press:  02 March 2011

Sarah Q. Xu
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
Jonathan Shaw
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
Edwin C. Kan
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
Get access

Abstract

The Coulomb blockade behavior was observed for both C60-PCBM and C70-PCBM at room temperature utilizing a nonvolatile memorycell fabricated through a liquid-transfer process. Room-temperature andlow-temperature (10K) electrical characterizations verified the blockadeeffect was originated from both molecular energy levels and single electroncharging energy. Molecular orbital energy was extracted and shown goodagreement with the literature [1].The successful integration and operationof this hybrid structure signified a strong potential for molecule-basedelectronic device design.

Information

Type
Research Article
Copyright
Copyright © Materials Research Society 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

REFERENCES

1. Chu, C-W., Shrotriya, V., Li, G. and Yang, Y., Appl. Phys. Lett. 88, 153504, (2006)Google Scholar
2. Ganguly, U., Lee, C. and Kan, E. C., MRS., Boston, MA, Nov. 29 – Dec. 3 (2004)Google Scholar
3. Mazin, I. I., Rashkeev, S.N., Antropov, V.P., Jepsen, O., Liechtenstein, A. I. and Andersen, O.K., Phys. Rev. B 45, 51145117 (1992)Google Scholar
4. Illescas, B. M., Martin, N. and Seoane, C., J. Org. Chem., 62(22), 75857591 (1997)Google Scholar
5. Hou, T.-H., Raza, H., Afshari, K., Ruebusch, D. J. and Kan, E. C., Appl. Phys. Lett. 92, 153109, (2008)Google Scholar
6. Lee, C., Meteer, J., Narayanan, V. and Kan, E. C., J. Electronic Materials 34, no. 1, 111, (2005)Google Scholar
7. Hall, D. B., Underhill, P. and Torkelson, J. M., Polymer Engineering and Science 38 (12), 20392045 (1998)Google Scholar
8. Hou, T.-H., Lee, C., Narayanan, V., Gangly, U. and Kan, E. C., IEEE Trans. Electron Devices 53, 30953102 (2006)Google Scholar
9. Hou, T.-H., Lee, C., Narayanan, V., Gangly, U. and Kan, E. C., IEEE Trans. Electron Devices 53, pp. 31033109 (2006)ssGoogle Scholar
10. Tanaka, H. and Takeuchi, K., Appl. Phys. A 80, 759761 (2005)Google Scholar
11. Robertson, J., J. Vac. Sci. Technol. B 18, 17851791 (2000)Google Scholar
12. Woo, S. J., Kim, E., and Lee, Y. H., Phys. Rev. B 47, 6721 (1993)Google Scholar