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Probing the Orbital Levels of Engineered Fullerenic Moleculesfrom a Nonvolatile Memory Cell

Published online by Cambridge University Press:  02 March 2011

Sarah Q. Xu ,
Jonathan Shaw  and
Edwin C. Kan
Sarah Q. Xu
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
Jonathan Shaw
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
Edwin C. Kan
Affiliation:
School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA.
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Abstract

The Coulomb blockade behavior was observed for both C60-PCBM and C70-PCBM at room temperature utilizing a nonvolatile memorycell fabricated through a liquid-transfer process. Room-temperature andlow-temperature (10K) electrical characterizations verified the blockadeeffect was originated from both molecular energy levels and single electroncharging energy. Molecular orbital energy was extracted and shown goodagreement with the literature [1].The successful integration and operationof this hybrid structure signified a strong potential for molecule-basedelectronic device design.

Keywords

electronic structurenanostructureorganic

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 1286: Symposium E – Molecular and Hybrid Materials for Electronics and Photonics , 2011 , mrsf10-1286-e08-29
Copyright
Copyright © Materials Research Society 2011

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References

REFERENCES

1. Chu, C-W., Shrotriya, V., Li, G. and Yang, Y., Appl. Phys. Lett. 88, 153504, (2006)Google Scholar
2. Ganguly, U., Lee, C. and Kan, E. C., MRS., Boston, MA, Nov. 29 – Dec. 3 (2004)Google Scholar
3. Mazin, I. I., Rashkeev, S.N., Antropov, V.P., Jepsen, O., Liechtenstein, A. I. and Andersen, O.K., Phys. Rev. B 45, 5114–5117 (1992)Google Scholar
4. Illescas, B. M., Martin, N. and Seoane, C., J. Org. Chem., 62(22), 7585–7591 (1997)Google Scholar
5. Hou, T.-H., Raza, H., Afshari, K., Ruebusch, D. J. and Kan, E. C., Appl. Phys. Lett. 92, 153109, (2008)Google Scholar
6. Lee, C., Meteer, J., Narayanan, V. and Kan, E. C., J. Electronic Materials 34, no. 1, 1–11, (2005)Google Scholar
7. Hall, D. B., Underhill, P. and Torkelson, J. M., Polymer Engineering and Science 38 (12), 2039–2045 (1998)Google Scholar
8. Hou, T.-H., Lee, C., Narayanan, V., Gangly, U. and Kan, E. C., IEEE Trans. Electron Devices 53, 3095–3102 (2006)Google Scholar
9. Hou, T.-H., Lee, C., Narayanan, V., Gangly, U. and Kan, E. C., IEEE Trans. Electron Devices 53, pp. 3103–3109 (2006)ssGoogle Scholar
10. Tanaka, H. and Takeuchi, K., Appl. Phys. A 80, 759–761 (2005)Google Scholar
11. Robertson, J., J. Vac. Sci. Technol. B 18, 1785–1791 (2000)Google Scholar
12. Woo, S. J., Kim, E., and Lee, Y. H., Phys. Rev. B 47, 6721 (1993)Google Scholar