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Processing of Silicon Wafers Followed by Microwave Photoconductivity Measurements

Published online by Cambridge University Press:  28 February 2011

A. Sanders ,
H. Wetzel  and
M. Kunst
A. Sanders
Affiliation:
Hahn-Meitner Institut, Solare Energetik, D – 1000 Berlin 39, West Germany
H. Wetzel
Affiliation:
Hahn-Meitner Institut, Solare Energetik, D – 1000 Berlin 39, West Germany
M. Kunst
Affiliation:
Hahn-Meitner Institut, Solare Energetik, D – 1000 Berlin 39, West Germany
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Abstract

The characterization of single crystalline silicon wafers for application in (opto)electronic devices by transient photoconductivity measurements is investigated. To this aim is the transient photoconductivity in Si wafers after different treatments determined by the Time Resolved Microwave Conductivity ( TRMC ) method. This technique is non-evasive and contactless and so in-situ measurements are possible. Application of TRMC measurements for process control and quality control of relevant process steps in the production of (opto)electronic devices is discussed in view of the experimental results presented.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 189: Symposium L – Microwave Processing of Materials II , 1990 , 403
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

1. Kunst, M. and Beck, G., J. Appl. Phys. 63, 1093 (1988)Google Scholar
2. Kunst, M., Miller, G., Schmidt, R. and Wetzel, H., Appl. Phys. A46, 77 (1988)Google Scholar