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Process-Property Relationships For a-Si1-xCx:H Deposition: Excursions in Parameter Space Guided by Real Time Spectroellipsometry

Published online by Cambridge University Press:  16 February 2011

Yiwei Lu ,
Sangbo Kim ,
Mehmet Gunes ,
Yeeheng Lee ,
C.R. Wronski  and
R.W. Collins
Yiwei Lu
Affiliation:
Materials Research Laboratory, Department of Electrical Engineering, and The Pennsylvania State University, University Park, PA 16802.
Sangbo Kim
Affiliation:
Materials Research Laboratory, Department of Physics, The Pennsylvania State University, University Park, PA 16802.
Mehmet Gunes
Affiliation:
Materials Research Laboratory, Department of Electrical Engineering, and The Pennsylvania State University, University Park, PA 16802.
Yeeheng Lee
Affiliation:
Materials Research Laboratory, Department of Electrical Engineering, and The Pennsylvania State University, University Park, PA 16802.
C.R. Wronski
Affiliation:
Materials Research Laboratory, Department of Electrical Engineering, and The Pennsylvania State University, University Park, PA 16802.
R.W. Collins
Affiliation:
Materials Research Laboratory, Department of Physics, The Pennsylvania State University, University Park, PA 16802.
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Abstract

Real time spectroellipsometry (RTSE) has been applied to study the growth of a-Si1-xCx:H alloys (x∼0.1; Eg=1.90–2.00 eV) for applications as i- and p-type layers in wide band gap solar cells. Two important material parameters, the optical gap and the relative bond-packing density (or void volume fraction), can be estimated from RTSE data collected during the growth of a sequence of layers onto the same substrate using different plasma-enhanced CVD conditions. In this way, large regions of parameter space have been scanned expeditiously, and an improved understanding of the effects of H2-dilution, substrate temperature (Ts), plasma power, gas pressure, and gas flow on the film properties has been obtained.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 336: Symposium A – Amorphous Silicon Technology - 1994 , 1994 , 595
Copyright
Copyright © Materials Research Society 1994

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References

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