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Production of Mo/si Multilayers At Increased Substrate Temperatures: The Effect On D-Spacing, Interface Roughness and Density.

Published online by Cambridge University Press:  15 February 2011

H.-J. Voorma ,
E. Louis ,
N.B. Koster ,
F. Bijkerk  and
M.J. van der
H.-J. Voorma
Affiliation:
Wiel FOM-Institute for Plasma Physics Rijnhuizen, Edisonbaan 14, 3439 MN Nieuwegein, The Netherlands
E. Louis
Affiliation:
Wiel FOM-Institute for Plasma Physics Rijnhuizen, Edisonbaan 14, 3439 MN Nieuwegein, The Netherlands
N.B. Koster
Affiliation:
Wiel FOM-Institute for Plasma Physics Rijnhuizen, Edisonbaan 14, 3439 MN Nieuwegein, The Netherlands
F. Bijkerk
Affiliation:
Wiel FOM-Institute for Plasma Physics Rijnhuizen, Edisonbaan 14, 3439 MN Nieuwegein, The Netherlands
M.J. van der
Affiliation:
Wiel FOM-Institute for Plasma Physics Rijnhuizen, Edisonbaan 14, 3439 MN Nieuwegein, The Netherlands
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Abstract

To obtain the optimal growth conditions of Mo/Si multilayer structures, produced with e-beam evaporation, the effect of using enhanced deposition temperatures is investigated in detail. We describe the variations of the structure for multilayers deposited at substrate temperatures ranging from 300 K to 550 K. A temperature of 490 K was found to be the optimum resulting in low interface roughness and moderate inter-diffusion. The decrease of the dspacing at the optimum substrate temperature, compared to coatings deposited at room temperature, is explained by a change in free volume of the Si layer.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 382: Symposium G – Structure and Properties of Multilayered Thin Films , 1995 , 375
Copyright
Copyright © Materials Research Society 1995

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References

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