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Progress in the Preparation of Aluminum Nitride Substrates from Bulk Crystals

Published online by Cambridge University Press:  01 February 2011

J.C. Rojo ,
L.J. Schowalter ,
Glen Slack ,
K. Morgan ,
J. Barani ,
S. Schujman ,
S. Biswas ,
B. Raghothamachar ,
M. Dudley  and
M. Shur
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J.C. Rojo
Affiliation:
Crystal IS, Inc., Latham, NY 12110
L.J. Schowalter
Affiliation:
Crystal IS, Inc., Latham, NY 12110 Rensselaer Polytechnic Institute, Troy, NY 12180
Glen Slack
Affiliation:
Crystal IS, Inc., Latham, NY 12110 Rensselaer Polytechnic Institute, Troy, NY 12180
K. Morgan
Affiliation:
Crystal IS, Inc., Latham, NY 12110
J. Barani
Affiliation:
Crystal IS, Inc., Latham, NY 12110
S. Schujman
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180
S. Biswas
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180
B. Raghothamachar
Affiliation:
SUNY, Stony Brook, NY 11794
M. Dudley
Affiliation:
SUNY, Stony Brook, NY 11794
M. Shur
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180 Sensor Electronic Technology, Inc., Latham, NY 12110
R. Gaska
Affiliation:
Rensselaer Polytechnic Institute, Troy, NY 12180 Sensor Electronic Technology, Inc., Latham, NY 12110
N.M. Johnson
Affiliation:
Palo Alto Research Center Inc. (PARC), Palo Alto, CA 94304
M. Kneissl
Affiliation:
Palo Alto Research Center Inc. (PARC), Palo Alto, CA 94304
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Abstract

Large (11-mm diameter) single-crystal AlN boules have been prepared using sublimationrecondensation growth. X-ray topography shows that substrates prepared from those boules have a dislocation density of less than 500 cm-2, while the central region of these substrates was nearly dislocation-free. Rocking curves of less than 10 arcsecs have been obtained indicating the high quality of these crystals. The AlN substrates have been used to growth an AlGaN/AlN multiquantum well structure with excellent crystalline quality and with photoluminescence peaked at around 260nm. In addition, a UV LED with emission wavelength at 360nm has been fabricated. This is the first operating opto-electronic device demonstrated on an AlN substrate.

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References

[1] Slack, G.A., McNelly, T.F., J. Crystal Growth 34, 263 (12976)Google Scholar
[2] Tanaka, M., Nakahata, s., Sogabe, K., Nakata, H., Tobioka, M., J. Appl. Phys. 36, L1062 (1997).Google Scholar
[3] Schlesser, R., Dalmau, R., Sitar, Z.. 7th Wide Bandgap III-nitride Workshop. Richmond, VA. March 10-14, 2002.Google Scholar
[4] Segal, A.S., Karpov, S.Y., Makarov, Y.N., Mokhov, E.N., Roenkov, A.D., Ramm, M.G., Vodakov, Y.A.. J. Crystal Growth 211, 68 (2000)Google Scholar
[5] Audurier, V., Demenet, J.L., Rabier, J., Philos. Mag. A, 77, 825 (1998)Google Scholar
[6] Azzaz, M., Michel, J.P., Feregotto, V., George, A., Mater. Sci. Eng. B, B71, 30 (2000)Google Scholar