Hostname: page-component-8448b6f56d-m8qmq Total loading time: 0 Render date: 2024-04-18T08:06:21.053Z Has data issue: false hasContentIssue false
  • English
  • Français

Properties and Growth of MBE Grown Erbium Doped Gallium Arsenide Co-Doped with Selenium

Published online by Cambridge University Press:  10 February 2011

P. Rutter ,
K. E. Singer ,
A. R. Peaker  and
A. C. Wright
P. Rutter
Affiliation:
Centre for Electronic Materials and Electrical Engineering & Electronics Department, MIST, Manchester, M60 1QD, UK
K. E. Singer
Affiliation:
Centre for Electronic Materials and Electrical Engineering & Electronics Department, MIST, Manchester, M60 1QD, UK
A. R. Peaker
Affiliation:
Centre for Electronic Materials and Electrical Engineering & Electronics Department, MIST, Manchester, M60 1QD, UK
A. C. Wright
Affiliation:
Advanced Materials Laboratory, North East Wales Institute, Connah's Quay, Wales, UK
Get access

Abstract

The growth of erbium doped GaAs by molecular beam epitaxy (MBE) can, depending on growth conditions, result in the precipitation of small spherical particles of erbium arsenide. It has been observed that by reducing the V:III (As:Ga) flux ratio to close to stoichiometry wirelike precipitates roughly aligned in the direction of growth are produced. The concentration of erbium incorporated into the GaAs lattice for a constant erbium flux is also affected by the As:Ga flux ratio with an increase in erbium doping being observed with decreasing As:Ga flux ratio.

Electrical measurements have been performed on erbium doped GaAs samples co-doped with selenium, an n-type dopant. Measurements have revealed that when erbium is present, the electron concentration is reduced by an amount approximately equal to 70% of the erbium concentration. DLTS measurements have shown that although large concentrations of deep levels are present in erbium doped material, the measured concentration of these deep levels is not high enough to account for the observed reduction in electron concentration with erbium doping.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 422: Symposium D – Rare-Earth Doped Semiconductors II , 1996 , 35
Copyright
Copyright © Materials Research Society 1996

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Rare Earth Doped Semiconductors, edited by Pomrenke, G.S., Klein, P.B., and Langer, D.W. (Mater. Res. Soc. Proc. 301,, Pittsburgh PA, 1992).Google Scholar
2. Palmstrom, C.J., Mounier, S., Finstad, T.G., and Miceli, P.F., Appl.Phys.Lett. 56, p. 382 (1990).Google Scholar
3. Ennen, H., Schneider, J., Pomrenke, G.S., and Axmann, A., Appl.Phys.Lett. 43, p. 943 (1983).Google Scholar
4. Zhao, X., Hirakawa, K., and Ikoma, T., Appl.Phys.Lett. 54, p. 712 (1989).Google Scholar
5. Bantien, F., Bauser, E., and Weber, J., J.Appl.Phys. 61, p. 2,803 (1987).Google Scholar
6. Uwai, K., Nakagome, H., and Takahei, K., J.Crystal Growth 93, p. 583 (1988).Google Scholar
7. Poole, I., Singer, K.E., and Peaker, A.R., J.Crystal Growth 121, p. 121 (1992).Google Scholar
8. Smith, R.S., Müller, H.D., Ennen, H., Wennekers, P., and Maier, M., Appl.Phys.Lett. 50, p. 49 (1987)Google Scholar
9. Gupta, S., Sethi, S., and Bhattacharya, P.K., Appl.Phys.Lett. 62, p. 1,128 (1993)Google Scholar
10. Yang, H.-P.D., Bhattacharya, P.K., and Chen, Y.-C., Electronics Letters 30, p. 598 (1994)Google Scholar
11. Sethi, S., Brock, T., Bhattacharya, P.K., Kim, J., Williamson, S., Craig, D., and Nees, J., IEEE.Electron.Device.Lett. 16, p. 106 (1995)Google Scholar
12. Singer, K.E., Rutter, P., and Peaker, A.R., Appl.Phys.Lett. 64, p. 707 (1994)Google Scholar
13. Coppinger, F., Genoe, J., Maude, D.K., Gennser, U., Portal, J.C., Singer, K.E., Rutter, P., Taskin, T., Peaker, A.R., and Wright, A.C., Phys.Rev.Lett. 75, p. 3513 (1995)Google Scholar
14. Rutter, P., Ph.D.Thesis, University of Manchester Institute of Science and Technology (1995)Google Scholar
15. Rutter, P., Singer, K.E., and Peaker, A.R., to be submitted to J. Cryst. Growth Google Scholar
16. Redwing, J.M., Kuech, T.F., Gordon, D.C., Vaartstra, B.A., nad Lau, S.S., J.Appl.Phys. 76, p. 1585 (1994)Google Scholar
17. Rutter, P., Singer, K.E., and Peaker, A.R., to be submitted to J.Appl.Phys Google Scholar