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Properties of Free-Standing GaN Bulk Crystals Grown by HVPE

Published online by Cambridge University Press:  10 February 2011

YU. Melnik ,
A. Nikolaev ,
I. Nikitina ,
K. Vassilevski  and
V. Dmitriev
YU. Melnik
Affiliation:
Crystal Growth Research Center 12H, 29 Ligovskii Pr., St.-Petersburg 193036, Russia A.F. Ioffe Institute, 26 Politechnicheskaya St., St.-Petersburg 194021, Russia
A. Nikolaev
Affiliation:
Crystal Growth Research Center 12H, 29 Ligovskii Pr., St.-Petersburg 193036, Russia A.F. Ioffe Institute, 26 Politechnicheskaya St., St.-Petersburg 194021, Russia
I. Nikitina
Affiliation:
A.F. Ioffe Institute, 26 Politechnicheskaya St., St.-Petersburg 194021, Russia
K. Vassilevski
Affiliation:
A.F. Ioffe Institute, 26 Politechnicheskaya St., St.-Petersburg 194021, Russia
V. Dmitriev
Affiliation:
TDI, Inc., 8660 Dakota Dr., Gaithersburg, MD 20877, USA MSRCE, Howard University, 2300 Sixth St., NW, Washington, DC 20059, USA
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Abstract

GaN wafers 200 μm thick and 30 mm diameter were fabricated. GaN was grown by hydride vapor phase epitaxy on SiC substrates and removed from the substrate by reactive ion etching. Lateral size of the GaN wafers was equal to the size of the initial SiC substrates. GaN wafers were cleaved in pieces and these pieces were characterised. It was found that after the fabrication, GaN crystals were slightly deformed and strained. An anneal at 830°C in nitrogen ambient eliminated the residual strains. The FWHM of ω-scan (0002) x-ray rocking curve for annealed crystals was less than 140 arcsec for both sides of the best GaN crystals. The lattice constants measured from both sides of the crystals were c =5.1853±0.0003 Å and a = 3.1889±0.0001 Å. The Nd – Na concentration determined by a mercury probe was about 2×1017cm−3 for as-grown GaN surface and about 2×1019cm−3 for former interface surface. Photoluminescence spectrum taken at 17 K revealed an edge peak at 3.472 eV with the FWHM value of 2.3 meV. A ratio of the edge peak intensity to the intensity of yellow band was higher than 1000. Initial TEM experiments were performed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 269
Copyright
Copyright © Materials Research Society 1998

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