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Properties of Gainasp Alloys Investigated by Optically Detected Macnetic Resonance Techniques

Published online by Cambridge University Press:  25 February 2011

C. Wetzel ,
B.K. Meyer ,
D. Grützmacher  and
P. Omling
C. Wetzel
Affiliation:
Physikdepartment TU München, E16, James-Franck-Str., D-8046 Garching, FRG
B.K. Meyer
Affiliation:
Physikdepartment TU München, E16, James-Franck-Str., D-8046 Garching, FRG
D. Grützmacher
Affiliation:
Institut für Halbleitertechnik, RWTH Aachen, Sommerfeldstr., 5100 Aachen, FRG
P. Omling
Affiliation:
Department of Solid State Physics, University of Lund, Box 118, S-22100 Lund, Sweden
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The quaternary GaxIn1−xAsyP1−y semiconductor alloy system has considerable importance for present day optoelectronic and microwave device applications. For state of the art high mobility samples grown by metal organic chemical vapor deposition (MOVPE) there are few experimental techniques which both can asess band structure related properties (effective mass m*, g-values of free electrons) and impurity related properties (luminescence, mobility and lifetimes). In this paper we compare optical and transport properties of the quaternary compound GaxIn1−xAsyP1−y, (x=0.47,y-l; x=0.42,y=0.92; x=0.28,y=0.61; x=0.12,y=0.34) lattice matched to*{nP by optically detected magnetic resonance techniques.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 216: Symposium T – Long-Wavelength Semiconductor Devices, Materials and Processes , 1990 , 353
Copyright
Copyright © Materials Research Society 1991

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References

REFERENCES

[1] Meyer, R., Grutzmacher, D., Jürgensen, H. and Balk, P., J. Cryst. Growth 93 (1988) 285 Google Scholar
[2] Pearsall, T.P., Eaves, L. and Portal, J.C., J. Appl. Phys. 54 (1983) 1037 Google Scholar
[3] Pakulis, E.J. and Northrop, G.A., Appl. Phys. Lett. 50 (1987) 1672 Google Scholar
[4] Romestain, R. and Weisbuch, C., Phys. Rev. Lett. 45 (1980) 2067 Google Scholar
[5] Wang, F. P., Monemar, B. and Ahlstrom, M., Phys Rev. B 39 (1989) 11195 Google Scholar
[6] Goetz, K.H., Bimberg, D., Jürgensen, H., Selder, J., Solomonov, A.V., Glinskii, G.F. and Razeghi, M., J. Appl. Phys. 54 (1983) 4543 Google Scholar
[7] GaInAsP Alloy Semiconductors, ed. by Pearsall, T.P., John Wiley (1982)Google Scholar
[8] Wright, M.G., Kana'ah, A., Cavenett, B.C., Johnson, G.R. and Davies, S.T., Semicond. Sci. Technology 4 (1989) 590 Google Scholar
[9] Nicholas, R.J., Sessions, S.J. and Portal, J.C., Appl. Phys. Lett. 37 (1980) 178 Google Scholar