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Properties Of Homoepitaxially Mbe-Grown Gan

Published online by Cambridge University Press:  15 February 2011

T. Suski ,
J. Krueger ,
C. Kisielowski ,
P. Phatak ,
M. S. H. Leung ,
Z. Liliental-Weber ,
A. Gassmann ,
N. Newman ,
M. D. Rubin  and
E. R. Weber
...Show all authors
T. Suski
Affiliation:
Lawrence Berkeley National Laboratory, and Dept. of Materials Science, University of California, Berkeley, CA 94720, USA, tadek@ux5.lbl.gov tadek@iris.unipress.waw.pl; UN1PRESS, High Pressure Research Center, 01-142 Warszawa, POLAND
J. Krueger
Affiliation:
Lawrence Berkeley National Laboratory, and Dept. of Materials Science, University of California, Berkeley, CA 94720, USA, tadek@ux5.lbl.gov tadek@iris.unipress.waw.pl;
C. Kisielowski
Affiliation:
Lawrence Berkeley National Laboratory, and Dept. of Materials Science, University of California, Berkeley, CA 94720, USA, tadek@ux5.lbl.gov tadek@iris.unipress.waw.pl;
P. Phatak
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
M. S. H. Leung
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
A. Gassmann
Affiliation:
Lawrence Berkeley National Laboratory, and Dept. of Materials Science, University of California, Berkeley, CA 94720, USA, tadek@ux5.lbl.gov tadek@iris.unipress.waw.pl;
N. Newman
Affiliation:
Lawrence Berkeley National Laboratory, and Dept. of Materials Science, University of California, Berkeley, CA 94720, USA, tadek@ux5.lbl.gov tadek@iris.unipress.waw.pl;
M. D. Rubin
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
E. R. Weber
Affiliation:
Lawrence Berkeley National Laboratory, and Dept. of Materials Science, University of California, Berkeley, CA 94720, USA, tadek@ux5.lbl.gov tadek@iris.unipress.waw.pl;
I. Grzegory
Affiliation:
UN1PRESS, High Pressure Research Center, 01-142 Warszawa, POLAND
J. Jun
Affiliation:
UN1PRESS, High Pressure Research Center, 01-142 Warszawa, POLAND
M. Bockowski
Affiliation:
UN1PRESS, High Pressure Research Center, 01-142 Warszawa, POLAND
S. Porowski
Affiliation:
UN1PRESS, High Pressure Research Center, 01-142 Warszawa, POLAND
H. I. Helava
Affiliation:
American Xtal Technology, Dublin, CA 94568, USA
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Abstract

Bulk single crystals of GaN were used for epitaxial growth of GaN films by molecular beam epitaxy. Low temperature photoluminescence yields much higher intensity emission in the near bandedge region for epitaxial films with respect to the situation in bulk crystals. Character of this luminescence changes also. Dominant band-to-band transitions in the bulk crystals are exchanged by bound exciton and/or donor-acceptor pair transitions observed in the epitaxial layers. We will compare the obtained results with the available data on the homoepitaxial samples grown by metalorganic chemical vapor deposition method and discuss the importance of establishing the basic information on energetic positions of excitonic transitions in stress free samples.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 423: Symposium E – III-Nitride, SiC, and Diamond Materials for Electronic , 1996 , 329
Copyright
Copyright © Materials Research Society 1996

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