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Properties of Sputter Deposited ZnO Films Co-doped with Lithium and Phosphorus

Published online by Cambridge University Press:  14 January 2013

T. N. Oder ,
A. Smith ,
M. Freeman ,
M. McMaster ,
B. Cai  and
M. L. Nakarmi
T. N. Oder
Affiliation:
Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, U.S.A.
A. Smith
Affiliation:
Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, U.S.A.
M. Freeman
Affiliation:
Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, U.S.A.
M. McMaster
Affiliation:
Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, U.S.A.
B. Cai
Affiliation:
Department of Physics, Brooklyn College of the CUNY, Brooklyn, NY 11210, U.S.A.
M. L. Nakarmi
Affiliation:
Department of Physics, Brooklyn College of the CUNY, Brooklyn, NY 11210, U.S.A.
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Abstract

Thin films of ZnO co-doped with lithium and phosphorus were deposited on sapphire substrates by RF magnetron sputtering. The films were sequentially deposited from ultra pure ZnO and Li3PO4 solid targets. Post deposition annealing was carried using a rapid thermal processor in O2 and N2 at temperatures ranging from 500 °C to 1000 °C for 3 min. Analyses performed using low temperature photoluminescence spectroscopy measurements reveal luminescence peaks at 3.359, 3.306, 3.245 eV for the co-doped samples. The x-ray diffraction 2θ-scans for all the films showed a single peak at about 34.4° with full width at half maximum of about 0.17°. Hall Effect measurements revealed conductivities that change from p-type to n-type over time.

Keywords

dopantoxidesputtering
Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 1494: Symposium Z – Oxide Semiconductors and Thin Films , 2013 , pp. 77 - 82
Copyright
Copyright © Materials Research Society 2013 

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References

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