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    Tsuruoka, Tohru Valov, Ilia Mannequin, Cedric Hasegawa, Tsuyoshi Waser, Rainer and Aono, Masakazu 2016. Humidity effects on the redox reactions and ionic transport in a Cu/Ta2O5/Pt atomic switch structure. Japanese Journal of Applied Physics, Vol. 55, Issue. 6S1, p. 06GJ09.

    Yang, Sang Mo Strelcov, Evgheni Paranthaman, M. Parans Tselev, Alexander Noh, Tae Won and Kalinin, Sergei V. 2015. Humidity Effect on Nanoscale Electrochemistry in Solid Silver Ion Conductors and the Dual Nature of Its Locality. Nano Letters, Vol. 15, Issue. 2, p. 1062.

    Tappertzhofen, Stefan Waser, Rainer and Valov, Ilia 2014. Impact of the Counter-Electrode Material on Redox Processes in Resistive Switching Memories. ChemElectroChem, Vol. 1, Issue. 8, p. 1287.

    Menzel, S. Valov, I. Waser, R. Adler, N. van den Hurk, J. and Tappertzhofen, S. 2013. 2013 5th IEEE International Memory Workshop. p. 92.

    Tappertzhofen, S. Waser, R. Valov, I. and Waser, R. 2013. 2013 13th Non-Volatile Memory Technology Symposium (NVMTS). p. 1.

    Tappertzhofen, Stefan Valov, Ilia Tsuruoka, Tohru Hasegawa, Tsuyoshi Waser, Rainer and Aono, Masakazu 2013. Generic Relevance of Counter Charges for Cation-Based Nanoscale Resistive Switching Memories. ACS Nano, Vol. 7, Issue. 7, p. 6396.

    Valov, Ilia and Kozicki, Michael N 2013. Cation-based resistance change memory. Journal of Physics D: Applied Physics, Vol. 46, Issue. 7, p. 074005.

  • MRS Proceedings, Volume 1330
  • January 2011, mrss11-1330-j01-02-k03-02

Proton mobility in SiO2 thin films and impact of hydrogen and humidity on the resistive switching effect

  • Stefan Tappertzhofen (a1) (a2), Marek Hempel (a1) (a2), Ilia Valov (a1) (a2) (a3) and Rainer Waser (a1) (a2) (a3)
  • DOI:
  • Published online: 29 July 2011

Silicon dioxide based Electrochemical Metallization (ECM) cells were intensively studied as a promising candidate for CMOS compatible non-volatile memory devices. The resistance of ECM cells can be switched between a high resistive (OFF) state and a low resistive (ON) state by applying a sufficient voltage or current pulse. This resistance transition is attributed to the formation and rupture of a few nanometers in diameter metallic filament. However, the metal ion transport which is believed to be responsible for the filamentary switching mechanism is not understood in detail. In case of SiO2 we suppose protons or humidity may enhance the metal ion transport.

In this work we report our studies on the proton incorporation in amorphous SiO2 thin films focused on the impact of hydrogen and humidity on the resistive switching effect. The switching behavior was analyzed by current-voltage measurements performed at different ambient conditions. The incorporation of hydrogen has been confirmed by Time-of-Flight Secondary-Ion-Mass-Spectroscopy (ToF-SIMS). The results led to an expansion of the defect model proposed in the literature.

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1.R. Waser and M. Aono , Nature Materials, 6 (2007)

3.I. Valov , R. Waser , J. R. Jameson and M. N. Kozicki , Nanotechnology, in press (2011)

5.B. G. Willis and D. V. Lang , Thin Solid Films, 467 (2004)

7.C. Cao , Y. He , J. Torras , E. Deumens , S. B. Trickey and H. Cheng , J. of Chem. Phys., 126 (2007)

9.R. Armunanto , C. F. Schwenk and B. M. Rode , J. Phys. Chem. A, 107 (2003)

10.J. L. Fulton , S. M. Kathmann , G. K. Schenter and M. Balasubramanian , J. Phys. Chem. A, 113 (2009)

11.N. Knorr , R. Wirtz , S. Rosselli and G. Nelles , J. Phys. Chem. C, 114 (2010)

13.R. Waser , R. Dittmann , G. Staikov and K. Szot , Adv. Mat., 21 (2009)

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