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Pulsed Laser Crystallization of Amorphous Silicon Films: Effects of Substrate Temperature and Laser Shot Density

Published online by Cambridge University Press:  21 February 2011

R. I. Johnson ,
G. B. Anderson ,
S. E. Ready ,
D. K. Fork  and
J. B. Boyce
R. I. Johnson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
G. B. Anderson
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
S. E. Ready
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
D. K. Fork
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
J. B. Boyce
Affiliation:
Xerox Palo Alto Research Center, 3333 Coyote Hill Rd., Palo Alto, CA 94304
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Abstract

A recent report on pulsed laser crystallization of a-Si thin films concluded that substrate bias temperatures up to 400°C in combination with laser fluences below 500 mJ/cm2 had little effect on grain size and transport properties. The current report describes the effects of substrate bias temperature up to 500°C and laser fluence up to 540 mJ/cm2 on grain size, mobility and Si (111) x-ray peak intensities. Results indicate that substrate bias temperatures above 400°C, in combination with high laser shot densities and large laser beam spot energies (> 500 mJ/cm2), are a factor in Improving these film properties.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 123
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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