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Pulsed–Raman Measurements of Temperature When Large Temperature Variations and Gradients are Present*

Published online by Cambridge University Press:  15 February 2011

R. F. Wood ,
M. Rasolt  and
G. E. Jellison Jr.
R. F. Wood
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
M. Rasolt
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
G. E. Jellison Jr.
Affiliation:
Solid State Division, Oak Ridge National Laboratory, Oak Ridge, TN
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Abstract

Pulsed Raman temperature measurements by Lo and Compaan on Si samples have been interpreted as proving that the surface region does not melt during intense pulsed laser irradiation. In this paper, it is shown by detailed calculations with the melting model that the choice of experimental parameters in the Raman measurements can severely compromise a straightforward interpretation of the data. Moreover, it is demonstrated that temperatures extracted from Raman measurements are highly sensitive to the temperature-dependent optical properties of the material. Finally, it is pointed out that the very large temperature gradients present during pulsed laser annealing may entirely invalidate the Stokes/anti-Stokes ratio as an accurate temperature probe.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 4: Symposium A – Laser and Electron-Beam Interactions with Solids , 1981 , 61
Copyright
Copyright © Materials Research Society 1982

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Footnotes

*

Research sponsored by the Division of Materials Science, U.S. Department of Energy, under contract W–7405–eng–26 with Union Carbide Corporation.

References

REFERENCES

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