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Quantitative Study of Al/W Interaction In Si/SiO2/W-Ti/Al Thin Film System

Published online by Cambridge University Press:  21 February 2011

Hung-Yu Liu ,
Peng-Heng Chang ,
Jim Bohlman  and
Hun-Lian Tsai
Hung-Yu Liu
Affiliation:
Central research laboratories, MS 147, Texas Instruments Inc., P.O. BOX 655936 Dallas, TX. 75265
Peng-Heng Chang
Affiliation:
Central research laboratories, MS 147, Texas Instruments Inc., P.O. BOX 655936 Dallas, TX. 75265
Jim Bohlman
Affiliation:
Semiconductor Process and Design Center, MS 944 Texas Instruments Inc., P.O. BOX 655936 Dallas, TX. 75265
Hun-Lian Tsai
Affiliation:
Central research laboratories, MS 147, Texas Instruments Inc., P.O. BOX 655936 Dallas, TX. 75265
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Abstract

The interaction of Al and W in the Si/SiO2/W-Ti/Al thin film system is studied quantitatively by glancing angle x-ray diffraction. The formation of Al-W compounds due to annealing is monitored by the variation of the integrated intensity from a few x-ray diffraction peaks of the corresponding compounds. The annealing was conducted at 400°C, 450°C and 500°C from 1 hour to 300 hours. The kinetics of compound formation is determined using x-ray diffraction data and verified by TEM observations. We will also show the correlation of the compound formation to the change of the electrical properties of these films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 119: Symposium F – Adhesions in Solids , 1988 , 153
Copyright
Copyright © Materials Research Society 1988

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