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Quantum Dot Growth in the Si-Ge-C System Through Multi-Step Procedure

Published online by Cambridge University Press:  10 February 2011

Yutaka Wakayama ,
Gerhard Gerth ,
Peter Werner  and
Leonid V. Sokolov
Yutaka Wakayama
Affiliation:
Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, waka@nrim.go.jp
Gerhard Gerth
Affiliation:
Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, waka@nrim.go.jp
Peter Werner
Affiliation:
Max-Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany, waka@nrim.go.jp
Leonid V. Sokolov
Affiliation:
Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch Lavrentieva 13, 630090 Novosibirsk, Russia
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Abstract

To fabricate nanometer-sized Ge dots on Si(100), we have investigated multi-step procedure, involving low temperature deposition of a Ge layer, a sub-monolayer C on a Ge wetting layer, a Ge top layer for three-dimensional (3D) dot formation and post-annealing. Effects of each procedure were discussed on the basis of an atomic force microscope study. 10nm-sized Ge dots with a high number density in the order of 1011 cm−2 were grown on the Si(100) substrate by combining each procedure and optimizing experimental conditions, such as deposition temperature, the C layer thickness and post-annealing temperature.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 618: Symposium K – Morphological & Compositional Evolution of Heteroepitaxial… , 2000 , 135
Copyright
Copyright © Materials Research Society 2000

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References

REFERENCES

1 Kamins, T. I., Carr, E. C., Williams, R. S., and Rosner, S. J., J. Appl. Phys. 81, 211 (1997).Google Scholar
2 Goryll, M., Vescan, L., Schmidt, K., Mesters, S., and Lüh, H., Appl. Phys. Lett. 71, 410 (1997).Google Scholar
3 Medeiros-Ribeiro, G., Bratkovski, A. M., Kamins, T. I., Ohlberg, D. A. A., and Williams, R. S., Science, 279, 353 (1998).Google Scholar
4 Ross, F. M., Tersoff, J., and Tromp, R. M., Phys. Rev. Lett. 80, 984 (1998).Google Scholar
5 Wang, X., Jiang, Z., Zhu, H., Lu, F., Huang, D., Liu, X., Hu, C., Chen, Y., Zhu, Z., and Yao, T., Appl. Phys. Lett. 71, 3543 (1997).Google Scholar
6 Schmidt, O. G., Lange, C., Eberl, K., Kienzle, O., and Ernst, F., Appl. Phys. Lett. 71, 2340 (1997).Google Scholar
7 Leifeld, O., Mfiler, E., Grüzmacher, D., Müler, B., and Kern, K., Appl. Phys. Lett. 74, 994 Google Scholar
8 Capellini, G., Gaspare, L. Di, Evangelisti, F., and Palange, E., Appl. Phys. Lett. 70, 493 (1997).Google Scholar