Hostname: page-component-848d4c4894-wzw2p Total loading time: 0 Render date: 2024-05-17T00:48:58.440Z Has data issue: false hasContentIssue false
  • English
  • Français

Quantum Effects on the Dielectric Function of Porous Silicon

Published online by Cambridge University Press:  17 March 2011

M. Cruz ,
S. F. Díaz ,
C. Wang ,
Y. G. Rubo  and
J. Tagüeña-Martínez
M. Cruz
Affiliation:
Escuela Superior de Ingeniería Mecánica y Eléctrica–UC, IPN, Av. Santa Ana 1000, 04430, México, D.F., México
S. F. Díaz
Affiliation:
Escuela Superior de Ingeniería Mecánica y Eléctrica–UC, IPN, Av. Santa Ana 1000, 04430, México, D.F., México
C. Wang
Affiliation:
Instituto de Investigaciones en Materiales, UNAM, A.P. 70-360, 04510, México, D.F., México
Y. G. Rubo
Affiliation:
Centro de Investigación en Energía, UNAM, A.P. 34, 62580, Temixco, Morelos, México
J. Tagüeña-Martínez
Affiliation:
Centro de Investigación en Energía, UNAM, A.P. 34, 62580, Temixco, Morelos, México
Get access

Abstract

In this work, the imaginary part of the dielectric function of porous silicon is studied by means of both the tight-binding and the effective medium approaches, in the latter exact result is obtained for the case of 50% porosity. Within the tight-binding approximation, the dielectric function is calculated by using the interconnected and chessboard-like supercell models for the Si skeleton. These microscopic models give quantitatively similar results, which are by a factor of three larger than those from the effective medium theory.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 638: Symposium F – Microcrystaline & Nanocrystalline Semiconductors-2000 , 2000 , F5.27.1
Copyright
Copyright © Materials Research Society 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Bergman, D. J., Phys. Rep., 43, 378 (1978); J. Phys. C 12, 4947 (1979).Google Scholar
2. Day, A. R., Grant, A. R., Sievers, A. J., and Thorpe, M. F., Phys. Rev. Lett. 84, 1978 (2000).Google Scholar
3. Kovalev, D., Polisski, G., Ben-Chorin, M., Diener, J., and Koch, F., J. Appl. Phys. 80, 5978 (1996).Google Scholar
4. Lugo, J. E., Río, J. A. Del, and Tagüeña-Martínez, J., J. Appl. Phys. 81, 1923 (1997).Google Scholar
5. Cruz, M., Wang, C., Beltrán, M.R., and Tagüeña-Martínez, J., Phys. Rev. B 53, 3827 (1996).Google Scholar
6. Cruz, M., Beltrán, M.R., Wang, C., Tagüeña-Martínez, J., and Rubo, Y. G., Phys. Rev. B 59, 15381 (1999).Google Scholar
7. Theiss, W., The Use of Effective Medium Theories in Optical Spectroscopy (in Advances in Solid State Physics, vol. 33 edited by Helbig, R., 1996) p. 149.Google Scholar
8. Keller, J. B., J. Math. Phys. 5, 548 (1964).Google Scholar
9. Dykhne, A. M., Sov. Phys. – JETP 32, 63 (1971).Google Scholar
10. Bassani, F. and Parravicini, G. Pastori, Electronic States and Optical Properties in Solids (Pergamon, New York, 1975) p. 154.Google Scholar