Hostname: page-component-54dcc4c588-sq2k7 Total loading time: 0 Render date: 2025-09-16T20:33:10.923Z Has data issue: false hasContentIssue false
  • English
  • Français

Radiation hard amorphous silicon particle sensors

Published online by Cambridge University Press:  01 February 2011

N. Wyrsch ,
C. Miazza ,
S. Dunand ,
C. Ballif ,
A. Shah ,
M. Despeisse ,
D. Moraes  and
P. Jarron
N. Wyrsch
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
C. Miazza
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
S. Dunand
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
C. Ballif
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
A. Shah
Affiliation:
Institut de Microtechnique, Université de Neuchâtel, Breguet 2, 2000 Neuchâtel, Switzerland
M. Despeisse
Affiliation:
CERN, CERN Meyrin, 1211 Genève 23, Switzerland
D. Moraes
Affiliation:
CERN, CERN Meyrin, 1211 Genève 23, Switzerland
P. Jarron
Affiliation:
CERN, CERN Meyrin, 1211 Genève 23, Switzerland
Get access

Abstract

Radiation tests of 32 μm thick hydrogenated amorphous silicon n-i-p diodes have been performed using a high energy 24 GeV proton beam up to fluences in excess of 1016 protons/cm2. The results are compared to irradiation of similar 1 μm and 32 μm thick n-i-p diodes using a proton beam of 280 keV at a fluence of 3x1013 protons/cm2. Even though both types of irradiation cause a significant drop in photoconductivity of thin or thick diodes, all samples survived the experiment and recover almost fully after a subsequent thermal annealing.

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

Article purchase

Temporarily unavailable

References

[1] Jarron, P. et al., Nucl. Instr. and Meth. in Phys. Res. A518, 366 (2004).Google Scholar
[2] Wyrsch, N. et al., Mater. Res. Soc. Proc. Vol. 808, 441 (2004).10.1557/PROC-808-A10.7Google Scholar
[3] Kuendig, J. et al., Solar Energy Materials & Solar Cells 79, 425 (2003).10.1016/S0927-0248(02)00486-5Google Scholar
[4] Srour, J.R et al., IEEE Trans. On Nuclear Science, Vol. 45, 6 (1998).10.1109/23.736506Google Scholar
[5] Kishimoto, N., Amekura, H., Kono, K., Lee, C.G., J. of Non-Cryst. Sol. 227-230, 238 (1998).10.1016/S0022-3093(98)00332-9Google Scholar
[6] Schwarz, R. et al., Proc. of the 18th IEEE Photovoltaic Specialists Conference, 903 (1985).Google Scholar
[7] Mendez, V. Perez et al., Nucl. Inst. Meth. In Phys. Res. A273, 127 (1988).10.1016/0168-9002(88)90807-8Google Scholar
[8] Chabloz, P. et al., J. Non-Cryst. Sol. 198-200, 1159 (1996).10.1016/0022-3093(96)00104-4Google Scholar
[9] Shah, A. et al., Mater. Res. Soc. Proc. 258, 15 (1992).10.1557/PROC-258-15Google Scholar
[10] http://www.srim.orgGoogle Scholar
[11] Wyrsch, N. et al, J. of Non-Cryst. Sol. 137&138, 431 (1991).10.1016/S0022-3093(05)80147-4Google Scholar