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Raman Microprobe Analysis of Simox Structures Implanted With Screen Oxide

Published online by Cambridge University Press:  28 February 2011

A. Perez-Rodriguez
Affiliation:
LCMM, Dept. Flsica Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 645–647, 08028 Barcelona, Spain.
J. R. Morante
Affiliation:
LCMM, Dept. Flsica Aplicada i Electrònica, Universitat de Barcelona, Avda. Diagonal 645–647, 08028 Barcelona, Spain.
E. Martin
Affiliation:
Dept. Física de la Materia Condensada, Universidad de Valladolid, 47011 Valladolid, Spain.
J. Jimenez
Affiliation:
Dept. Física de la Materia Condensada, Universidad de Valladolid, 47011 Valladolid, Spain.
J. Margail
Affiliation:
CEA/DTA/LETI, BP 85X, Grenoble Cedex, France.
M. A. Papon
Affiliation:
CEA/DTA/LETI, BP 85X, Grenoble Cedex, France.
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Abstract

The analysis of SIMOX structures obtained by doing the implantation with different thicknesses of thermal oxide (screen oxide) has been perfomed by Raman scattering, and the results have been correlated with those previously obtained by TEM. The use of a microRaman system on low angle bevelled sample has allowed to directly observe the different regions in the structures, corroborating the structural differences observed by TEM as a function of the screen oxide thickness. For as implanted structures, strong non homogeneous strain and disorder effects are observed in the top Si layers. After the High Temperature Anneal (HTA) process, crystalline quality of the structures is improved. The analysis of the spectra obtained at different excitation powers points out the dependence of the thermal effects of the spectra on the structural features of the scattering volume, as the dislocation density in the annealed layers. This dependence allows the assesment of the crystalline quality of these structures to be made.

Type
Research Article
Copyright
Copyright © Materials Research Society 1992

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References

REFERENCES

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