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RAMAN SCATTERING AND X-RAY DIFFRACTION CHARACTERIZATION OF AMORPHOUS SEMICONDUCTOR MULTILAYER INTERFACES

Published online by Cambridge University Press:  28 February 2011

J. GONZALEZ ,
D.D. ALLRED ,
O.V. NGUYEN ,
D. MARTIN  and
D. PAWLIK
J. GONZALEZ
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
D.D. ALLRED
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
O.V. NGUYEN
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
D. MARTIN
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
D. PAWLIK
Affiliation:
Energy Conversion Devices, Inc., 1675 West Maple Road, Troy, Michigan 48084
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Abstract

In the present study, Raman spectroscopy (RS) and x-ray diffraction have been used to characterize semiconductor multilayer interfaces. A model for Raman spectra of multilayers is developed and applied to the specific case of the interfaces of a-Si/a-Ge multilayers. Quantification of the ‘blurring’ of interfaces is possible because RS is capable of directly ‘counting’ the total number of chemical bonds of a given type in the film. Multilayers, prepared by various deposition techniques, are compared. Several a-Si/a-Ge multilayers deposited by UHV evaporation (MBD) exhibit exceptionally sharp interfaces (intermixing width <l.0Å) and regular periodicities.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 56: Symposium H – Layered Structures and Epitaxy , 1985 , 389
Copyright
Copyright © Materials Research Society 1986

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