Hostname: page-component-76fb5796d-vfjqv Total loading time: 0 Render date: 2024-04-29T05:20:35.043Z Has data issue: false hasContentIssue false

Rapid Thermal Processing and Crystallization Kinetics in Lead Zirconate Titanate (PZT) Thin Films

Published online by Cambridge University Press:  15 February 2011

E.M. Griswold
Affiliation:
Department of Materials and Metallurgical Engineering, Queen's University, Kingston, Canada, K7L 3N6
L. Weaver
Affiliation:
Department of Materials and Metallurgical Engineering, Queen's University, Kingston, Canada, K7L 3N6
I.D. Calder
Affiliation:
Telecom Microelectronics Centre, Northern Telecom Ltd., P.O. Box 3511, Station C, Ottawa, Ontario, Canada K1Y 4H7
M. Sayer
Affiliation:
Department of Materials and Metallurgical Engineering, Queen's University, Kingston, Canada, K7L 3N6
Get access

Abstract

Rapid thermal processing (RTP) has been used to examine the crystallization kinetics of lead zirconate titanate (PZT) fabricated using a sol gel process. Depth profiling of PZT films was performed with glancing angle x-ray diffraction and transmission electron microscopy. The films were annealed using RTP ramp rates from 10°C/s to 200°C/s and hold temperatures from 525°C to 650°C. The effect of ramp rate on the phase transformation is presented, and the growth of oriented columnar structures is demonstrated. Films subjected to RTP at 650°C for 1s using a ramp of 10°C/s began to transform to perovskite and were ferroelectric while a ramp of 100°C/s (same hold) produced a linear material which was pyrochlore. Longer hold conditions such as 650°C for 30s produced ferroelectric films with Pr in excess of 20μC/cm2 and relative permittivities ε > 600.

Type
Research Article
Copyright
Copyright © Materials Research Society 1995

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Griswold, E.M., Sayer, M. and Weaver, L., in 6th International Symposium of Integrated Ferroelectrics (ISIF 94), Monterey, March 1994, to appear in J. Int. Ferroelectrics.Google Scholar
2. Hu, H., Peng, C.J., and Krupanidhi, S.B., Thin Solid Films 223, 327 (1993).Google Scholar
3. Dang, E.K.F. and Gooding, R.J., submitted to Phys. Rev. B (1994).Google Scholar
4. Tuttle, B.A., Voigt, J.A., Goodnow, D.C., Lamppa, D.L., Headly, T.J., Eatough, M.O., Zender, G., Nasby, R.D. and Rodgers, S.M., J. Amer. Ceram. Soc. 76(6), 1537 (1993).Google Scholar
5. Vasant Kumar, C.V.R., Pascual, R. and Sayer, M., J. Appl. Phys. 71(2), 864 (1992).Google Scholar
6. Sayer, M., in proceedings of 3rd International Symposium of Integrated Ferroelectrics (ISIF91), Colorado Springs, April 1991, p. 1.Google Scholar
7. Weaver, L., in Microscopical Society of Canada, 21st Annual Meeting, Montreal, 1994.Google Scholar
8. Avrami, M., Chem. Phys. 7(12), (1939)1103.Google Scholar
9. Griswold, E.M., Weaver, L., Calder, I.D. and Sayer, M., in preparationGoogle Scholar
10. Voigt, J.A., Tuttle, B.A., Headly, T.J., Eatough, M.O., Lamppa, D.L. and Goodnow, D., Mat. Res. Soc. Symp. Proc. Vol 310, (1993), p15.Google Scholar
11. Kwok, C.K. and Desu, S.B., Ferroelectric films, ed. Balla, A.S. and Nair, K.M., (Ceram. Trans. 25, Amer. Ceram. Soc, Westerville, OH, 1992) p85.Google Scholar
12. Ranganathan, S. and von Heimendahl, M., J. Mater. Sci. 16, (1981) 2401.Google Scholar
13. Griswold, E.M. and Calder, I.D., in preparation.Google Scholar