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RCA and IMEC/SC2 Clean: Metallic Immunity and Gate Oxide Integrity

Published online by Cambridge University Press:  10 February 2011

Weidong Chen ,
Tushar Dhayagude ,
Prasad Chaparala ,
Esin Demirlioglu ,
Mohsen Shenasa ,
Twan Bearda ,
Sophia Arnauts  and
Marc Meuris
Weidong Chen
Affiliation:
National Semiconductor Corp, Advanced Technology Group, Santa Clara, CA 95052
Tushar Dhayagude
Affiliation:
National Semiconductor Corp, Advanced Technology Group, Santa Clara, CA 95052
Prasad Chaparala
Affiliation:
National Semiconductor Corp, Advanced Technology Group, Santa Clara, CA 95052
Esin Demirlioglu
Affiliation:
National Semiconductor Corp, Advanced Technology Group, Santa Clara, CA 95052
Mohsen Shenasa
Affiliation:
National Semiconductor Corp, Advanced Technology Group, Santa Clara, CA 95052
Twan Bearda
Affiliation:
IMEC, Clean Technology Group, Leuven, Belgium
Sophia Arnauts
Affiliation:
IMEC, Clean Technology Group, Leuven, Belgium
Marc Meuris
Affiliation:
IMEC, Clean Technology Group, Leuven, Belgium
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Abstract

Dilute HF/RCA and IEMC/SC2 cleans have been evaluated on two process lines with different metallic contamination levels. VPD-DSE-TXRF and SPV techniques were used to monitor the metallic contamination. Gate oxide integrity(GOI) tests were performed on several structures. Both HF/RCA and IMEC/SC2 cleans have shown good Qbd and Ebd results for the clean process line. Lower Qbd and Ebd values were obtained for both cleans in the relatively contaminated process line. These results suggest that poor GOI is related to the metallic contamination in the oxide or at the SiO2/Si interface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 477 , 1997 , 225
Copyright
Copyright © Materials Research Society 1997

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Footnotes

*

Fujitsu Microelectronic Inc., San Jose, CA 95134.

References

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