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Reactive Ion Etching of Indium-Based III-V Materials using CH4-H2-Ar Mixtures

Published online by Cambridge University Press:  26 February 2011

A. Fathimulla ,
T. Loughran  and
J. Bates
A. Fathimulla
Affiliation:
Allied-Signal Aerospace Company Aerospace Technology Center 9140 Old Annapolis Road Columbia, Maryland 21045
T. Loughran
Affiliation:
Allied-Signal Aerospace Company Aerospace Technology Center 9140 Old Annapolis Road Columbia, Maryland 21045
J. Bates
Affiliation:
Allied-Signal Aerospace Company Aerospace Technology Center 9140 Old Annapolis Road Columbia, Maryland 21045
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Extract

Dry etching of indium-based III–V materials in chlorine-based gases is difficult because of the low vapor pressure of the indium chloride by-product. Recently, reactive ion etching of InP(1,2), and GaAs(3,4) using methane, hydrogen and argon mixture in which volatile organometallic group III compounds are formed has been employed. In this paper, we report the reactive ion etching of indium-based materials using CH4:H2:Ar and SiCl4:Ar mixtures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 144: Symposium W – Advances in Materials, Processing and Devices in III-V Compound Semiconductors , 1988 , 501
Copyright
Copyright © Materials Research Society 1989

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References

REFERENCES

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