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Reactive Multilayer Foils for Silicon Wafer Bonding

Published online by Cambridge University Press:  26 February 2011

Xiaotun Qiu  and
Jiaping Wang
Xiaotun Qiu
Affiliation:
xiaotun@me.lsu.edu, Louisiana State University, Mechanical Engineering, 2508 CEBA, Louisiana State University, Baton Rouge, LA, 70803, United States
Jiaping Wang
Affiliation:
jiaping@me.lsu.edu, Louisiana State University, Department of Mechanical Engineerring, Baton Rouge, LA, 70803, United States
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Abstract

In this study silicon wafers were bonded using Al/Ni reactive multilayer foils as local heat sources for melting solder layers. Exothermic reactions in Al/Ni reactive multilayer foils were investigated by XRD and DSC. XRD measurements showed that dominant product after exothermic reaction was ordered B2 AlNi compound. The heat of reaction was calculated to be -57.9 KJ/mol by DSC. With Al/Ni reactive multilayer foil, localized heating can be achieved during bonding process. Both experimental measurements and numerical simulation showed that the heat exposure to the wafers was highly limited and localized. Moreover, leakage test showed that this bonding approach possessed a good hermeticity.

Keywords

joiningenergetic materialthin film
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 968: Symposium V – Advanced Electronic Packaging , 2006 , 0968-V02-06
Copyright
Copyright © Materials Research Society 2007

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References

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