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Reactive Solid-Phase Epitaxy: ∼ A novel growth method for single-crystalline thin films of complex oxides with superlattice structure ∼

Published online by Cambridge University Press:  11 February 2011

H. Ohta ,
K. Nomura ,
H. Hiramatsu ,
T. Suzuki ,
K. Ueda ,
M. Orita ,
M. Hirano ,
Y. Ikuhara  and
H. Hosono
H. Ohta
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
K. Nomura
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan.
H. Hiramatsu
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
T. Suzuki
Affiliation:
Japan Fine Ceramics Center, 2–4–1 Mutsuno, Atsuta, Nagoya 456–0023, Japan.
K. Ueda
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan.
M. Orita
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
M. Hirano
Affiliation:
Hosono Transparent ElectroActive Materials, ERATO, JST, 3–2–1 Sakado, Takatsu, Kawasaki 213–0012, Japan.
Y. Ikuhara
Affiliation:
Engineering Research Institute, University of Tokyo, 2–11–16 Yayoi, Bunkyo, Tokyo 113–8656, Japan.
H. Hosono
Affiliation:
Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori, Yokohama, 226–8503, Japan.
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Abstract

We have developed a novel growth method for single-crystalline film of natural superlattice oxides and named the method “Reactive Solid-Phase Epitaxy (R-SPE).” Single-crystalline thin films of homologous series In-GaO3(ZnO)m (m=integer) are fabricated by the R-SPE method and its growth mechanism, especially a role of ZnO epitaxial layer, is clarified. High-temperature annealing of bi-layer films consisting of an amorphous InGaO3(ZnO)5 layer deposited at room temperature and an epitaxial ZnO layer on YSZ substrate allows for the growth of single-crystalline film with a controlled chemical composition. The ZnO layer plays an essential role in determining the crystallographic orientation, while the thickness ratio between the two layers controls the film composition.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 747: Symposia T/V – Crystalline Oxides on Semiconductors – Interfacial Issues for Oxide-Based Electronics , 2002 , V2.5
Copyright
Copyright © Materials Research Society 2003

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References

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