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The Reactivity of HCI and Methyltrichlorosilane with Silicon Carbide Surfaces

Published online by Cambridge University Press:  22 February 2011

Mark D. Allendorf  and
Duane A. Outka
Mark D. Allendorf
Affiliation:
Sandia National Laboratories, Livermore, CA 94551–0969
Duane A. Outka
Affiliation:
Sandia National Laboratories, Livermore, CA 94551–0969
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Abstract

This work explores the reactivity of HCI and methyltrichlorosilane (MTS) with polycrystalline β-silicon carbide (SiC) surfaces using temperature-programmed desorption (TPD) and Auger electron spectroscopy. HCl is a corrosive gas that inhibits SiC deposition. The results show that HCl is adsorbed by SiC, forming a stable surface chloride that could inhibit SiC deposition. TPD shows that chlorine desorbs as HCI or SiCl4, confirming that HCl can etch SiC surfaces. Desorption is rate-limited by the breaking of Si-Cl bonds. MTS is also adsorbed by SiC; its desorption is similar to that of HCI.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 282: Symposium E – Chemical Perspectives of Microelectronic Materials III , 1992 , 439
Copyright
Copyright © Materials Research Society 1993

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References

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